High mobility thin film transistors with transparent ZnO channels

Junya Nishii; Faruque M. Hossain; Shingo Takagi; Tetsuya Aita; Koji Saikusa; Yuji Ohmaki; Isao Ohkubo; Shuya Kishimoto; Akira Ohtomo; Tomoteru Fukumura; Fumihiro Matsukura; Yuzo Ohno; Hideomi Koinuma; Hideo Ohno; Masashi Kawasaki

doi:10.1143/jjap.42.l347

High mobility thin film transistors with transparent ZnO channels

Junya Nishii, Faruque M. Hossain, Shingo Takagi, Tetsuya Aita, Koji Saikusa, Yuji Ohmaki, Isao Ohkubo, Shuya Kishimoto, Akira Ohtomo, Tomoteru Fukumura, Fumihiro Matsukura, Yuzo Ohno, Hideomi Koinuma, Hideo Ohno, Masashi Kawasaki

Research output: Contribution to journal › Letter › peer-review

296 Citations (Scopus)

Abstract

We have fabricated high performance ZnO thin film transistors (TFTs) using CaHfO_x, buffer layer between ZnO channel and amorphous silicon-nitride gate insulator. The TFT structure, dimensions, and materials set are identical to those of the commercial amorphous silicon (a-Si) TFTs in active matrix liquid crystal display, except for the channel and buffer layers replacing a-Si. The field effect mobility can be as high as 7 cm²·V^-1·s^-1 for devices with maximum process temperature of 300°C. The process temperature can be reduced to 150°C without much degrading the performance, showing the possibility of the use of polymer substrate.

Original language	English
Pages (from-to)	L347-L349
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	42
Issue number	4 A
DOIs	https://doi.org/10.1143/jjap.42.l347
Publication status	Published - 2003 Apr 1

Keywords

CaHfO
Field effect mobility
Pulsed laser deposition
TFT
ZnO

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.42.l347

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Nishii, J., Hossain, F. M., Takagi, S., Aita, T., Saikusa, K., Ohmaki, Y., Ohkubo, I., Kishimoto, S., Ohtomo, A., Fukumura, T., Matsukura, F., Ohno, Y., Koinuma, H., Ohno, H., & Kawasaki, M. (2003). High mobility thin film transistors with transparent ZnO channels. Japanese Journal of Applied Physics, Part 2: Letters, 42(4 A), L347-L349. https://doi.org/10.1143/jjap.42.l347

Nishii, J, Hossain, FM, Takagi, S, Aita, T, Saikusa, K, Ohmaki, Y, Ohkubo, I, Kishimoto, S, Ohtomo, A, Fukumura, T , Matsukura, F, Ohno, Y, Koinuma, H, Ohno, H & Kawasaki, M 2003, 'High mobility thin film transistors with transparent ZnO channels', Japanese Journal of Applied Physics, Part 2: Letters, vol. 42, no. 4 A, pp. L347-L349. https://doi.org/10.1143/jjap.42.l347

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title = "High mobility thin film transistors with transparent ZnO channels",

abstract = "We have fabricated high performance ZnO thin film transistors (TFTs) using CaHfOx, buffer layer between ZnO channel and amorphous silicon-nitride gate insulator. The TFT structure, dimensions, and materials set are identical to those of the commercial amorphous silicon (a-Si) TFTs in active matrix liquid crystal display, except for the channel and buffer layers replacing a-Si. The field effect mobility can be as high as 7 cm2·V-1·s-1 for devices with maximum process temperature of 300°C. The process temperature can be reduced to 150°C without much degrading the performance, showing the possibility of the use of polymer substrate.",

keywords = "CaHfO, Field effect mobility, Pulsed laser deposition, TFT, ZnO",

author = "Junya Nishii and Hossain, {Faruque M.} and Shingo Takagi and Tetsuya Aita and Koji Saikusa and Yuji Ohmaki and Isao Ohkubo and Shuya Kishimoto and Akira Ohtomo and Tomoteru Fukumura and Fumihiro Matsukura and Yuzo Ohno and Hideomi Koinuma and Hideo Ohno and Masashi Kawasaki",

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doi = "10.1143/jjap.42.l347",

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T1 - High mobility thin film transistors with transparent ZnO channels

AU - Nishii, Junya

AU - Hossain, Faruque M.

AU - Takagi, Shingo

AU - Aita, Tetsuya

AU - Saikusa, Koji

AU - Ohmaki, Yuji

AU - Ohkubo, Isao

AU - Kishimoto, Shuya

AU - Ohtomo, Akira

AU - Fukumura, Tomoteru

AU - Matsukura, Fumihiro

AU - Ohno, Yuzo

AU - Koinuma, Hideomi

AU - Ohno, Hideo

AU - Kawasaki, Masashi

PY - 2003/4/1

Y1 - 2003/4/1

N2 - We have fabricated high performance ZnO thin film transistors (TFTs) using CaHfOx, buffer layer between ZnO channel and amorphous silicon-nitride gate insulator. The TFT structure, dimensions, and materials set are identical to those of the commercial amorphous silicon (a-Si) TFTs in active matrix liquid crystal display, except for the channel and buffer layers replacing a-Si. The field effect mobility can be as high as 7 cm2·V-1·s-1 for devices with maximum process temperature of 300°C. The process temperature can be reduced to 150°C without much degrading the performance, showing the possibility of the use of polymer substrate.

AB - We have fabricated high performance ZnO thin film transistors (TFTs) using CaHfOx, buffer layer between ZnO channel and amorphous silicon-nitride gate insulator. The TFT structure, dimensions, and materials set are identical to those of the commercial amorphous silicon (a-Si) TFTs in active matrix liquid crystal display, except for the channel and buffer layers replacing a-Si. The field effect mobility can be as high as 7 cm2·V-1·s-1 for devices with maximum process temperature of 300°C. The process temperature can be reduced to 150°C without much degrading the performance, showing the possibility of the use of polymer substrate.

KW - CaHfO

KW - Field effect mobility

KW - Pulsed laser deposition

KW - TFT

KW - ZnO

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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High mobility thin film transistors with transparent ZnO channels

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Keywords

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