High-mobility strained-Si PMOSFET's

Deepak K. Nayak, K. Goto, A. Yutani, J. Murota, Yasuhiro Shiraki

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138 Citations (Scopus)


Operation and fabrication of a new high channelmobility strained-Si PMOSFET are presented. The growth of high-quality strained Si layer on completely relaxed, step-graded, SiGe buffer layer is demonstrated by gas source MBE. The strained-Si layer is characterized by double crystal X-ray diffraction, photoluminescence, and transmission electron microscopy. The operation of a PMOSFET is shown by device simulation and experiment. The high-mobility strained-Si PMOSFET is fabricated on strained-Si, which is grown epitaxially on a completely relaxed step-graded Sio.szGeo.is buffer layer on Si(lOO) substrate. At high vertical fields (high \Vg\), the channel mobility of the strained-Si device is found to be 40% and 200% higher at 300 K and 77 K, respectively, compared to those of the bulk Si device. In the case of the strained-Si device, degradation of channel mobility due to Si/SiOo interface scattering is found to be more pronounced compared to that of the bulk Si device. Carrier confinement at the type-II strained-Si/SiGe-buffer interface is clearly demonstrated from device transconductance and C-V measurements at 300 K and 77 K.

Original languageEnglish
Pages (from-to)1709-1716
Number of pages8
JournalIEEE Transactions on Electron Devices
Issue number10
Publication statusPublished - 1996
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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