High-Mobility Sm-Doped Bi2Se3 Ferromagnetic Topological Insulators and Robust Exchange Coupling

Taishi Chen, Wenqing Liu, Fubao Zheng, Ming Gao, Xingchen Pan, Gerrit Van Der Laan, Xuefeng Wang, Qinfang Zhang, Fengqi Song, Baigeng Wang, Baolin Wang, Yongbing Xu, Guanghou Wang, Rong Zhang

Research output: Contribution to journalArticlepeer-review

Abstract

High-mobility (SmxBi1-x)2Se3 topological insulators (with x = 0.05) show a Curie temperature of about 52 K, and the carrier concentration and Fermi wave vector can be manipulated by intentional Te introduction with no significant influence on the Curie temperature. The origin of the ferromagnetism is attributed to the trivalent Sm dopant, as confirmed by X-ray magnetic circular dichroism and first-principles calculations. The carrier concentration is on the order of 1019 cm-3 and the mobility can reach about 7200 cm2 V-1 s-1 with pronounced Shubnikov-de Haas oscillations.

Original languageEnglish
Pages (from-to)4823-4829
Number of pages7
JournalAdvanced Materials
Volume27
Issue number33
DOIs
Publication statusPublished - 2015 Sep 1
Externally publishedYes

Keywords

  • dilute magnetic semiconductors
  • ferromagnetism
  • magnetic doping
  • topological insulators
  • X-ray magnetic circular dichroism (XMCD)

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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