High-mobility field-effect transistor based on crystalline ZnSnO3 thin films

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3 Citations (Scopus)

Abstract

We propose crystalline ZnSnO3 as a new channel material for field-effect transistors. By molecular-beam epitaxy on LiNbO3(0001) substrates, we synthesized films of ZnSnO3, which crystallizes in the LiNbO3-type polar structure. Field-effect transistors on ZnSnO3 exhibit n-type operation with field-effect mobility of as high as 45 cm2V-1s-1 at room temperature. Systematic examination of the transistor operation for channels with different Zn/Sn compositional ratios revealed that the observed high-mobility reflects the nature of stoichiometric ZnSnO3 phase. Moreover, we found an indication of coupling of transistor characteristics with intrinsic spontaneous polarization in ZnSnO3, potentially leading to a distinct type of polarization-induced conduction.

Original languageEnglish
Article number055327
JournalAIP Advances
Volume8
Issue number5
DOIs
Publication statusPublished - 2018 May 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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