High-mobility field-effect transistor based on crystalline ZnSnO3 thin films

Hiroya Minato; Kohei Fujiwara; Atsushi Tsukazaki

doi:10.1063/1.5034403

High-mobility field-effect transistor based on crystalline ZnSnO₃ thin films

Hiroya Minato, Kohei Fujiwara, Atsushi Tsukazaki

Materials Property Division

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We propose crystalline ZnSnO₃ as a new channel material for field-effect transistors. By molecular-beam epitaxy on LiNbO₃(0001) substrates, we synthesized films of ZnSnO₃, which crystallizes in the LiNbO₃-type polar structure. Field-effect transistors on ZnSnO₃ exhibit n-type operation with field-effect mobility of as high as 45 cm²V^-1s^-1 at room temperature. Systematic examination of the transistor operation for channels with different Zn/Sn compositional ratios revealed that the observed high-mobility reflects the nature of stoichiometric ZnSnO₃ phase. Moreover, we found an indication of coupling of transistor characteristics with intrinsic spontaneous polarization in ZnSnO₃, potentially leading to a distinct type of polarization-induced conduction.

Original language	English
Article number	055327
Journal	AIP Advances
Volume	8
Issue number	5
DOIs	https://doi.org/10.1063/1.5034403
Publication status	Published - 2018 May 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.5034403

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@article{4a9ea242993b4678a5c278317d0d362d,

title = "High-mobility field-effect transistor based on crystalline ZnSnO3 thin films",

abstract = "We propose crystalline ZnSnO3 as a new channel material for field-effect transistors. By molecular-beam epitaxy on LiNbO3(0001) substrates, we synthesized films of ZnSnO3, which crystallizes in the LiNbO3-type polar structure. Field-effect transistors on ZnSnO3 exhibit n-type operation with field-effect mobility of as high as 45 cm2V-1s-1 at room temperature. Systematic examination of the transistor operation for channels with different Zn/Sn compositional ratios revealed that the observed high-mobility reflects the nature of stoichiometric ZnSnO3 phase. Moreover, we found an indication of coupling of transistor characteristics with intrinsic spontaneous polarization in ZnSnO3, potentially leading to a distinct type of polarization-induced conduction.",

author = "Hiroya Minato and Kohei Fujiwara and Atsushi Tsukazaki",

note = "Funding Information: The authors thank N. Shibata for valuable discussions, J. Shiogai and K. Miura for their assistance with sample preparation, and NEOARK Corporation for the use of a maskless lithography system PALET. This work was performed under the Inter-University Cooperative Research Program of the Institute for Materials Research, Tohoku University (Proposal No. 17G0415). This work was partly supported by JSPS KAKENHI (JP15H02022) and Kato Foundation for Promotion of Science (KJ-2607). Publisher Copyright: {\textcopyright} 2018 Author(s).",

year = "2018",

month = may,

day = "1",

doi = "10.1063/1.5034403",

language = "English",

volume = "8",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics Publising LLC",

number = "5",

}

TY - JOUR

T1 - High-mobility field-effect transistor based on crystalline ZnSnO3 thin films

AU - Minato, Hiroya

AU - Fujiwara, Kohei

AU - Tsukazaki, Atsushi

N1 - Funding Information: The authors thank N. Shibata for valuable discussions, J. Shiogai and K. Miura for their assistance with sample preparation, and NEOARK Corporation for the use of a maskless lithography system PALET. This work was performed under the Inter-University Cooperative Research Program of the Institute for Materials Research, Tohoku University (Proposal No. 17G0415). This work was partly supported by JSPS KAKENHI (JP15H02022) and Kato Foundation for Promotion of Science (KJ-2607). Publisher Copyright: © 2018 Author(s).

PY - 2018/5/1

Y1 - 2018/5/1

N2 - We propose crystalline ZnSnO3 as a new channel material for field-effect transistors. By molecular-beam epitaxy on LiNbO3(0001) substrates, we synthesized films of ZnSnO3, which crystallizes in the LiNbO3-type polar structure. Field-effect transistors on ZnSnO3 exhibit n-type operation with field-effect mobility of as high as 45 cm2V-1s-1 at room temperature. Systematic examination of the transistor operation for channels with different Zn/Sn compositional ratios revealed that the observed high-mobility reflects the nature of stoichiometric ZnSnO3 phase. Moreover, we found an indication of coupling of transistor characteristics with intrinsic spontaneous polarization in ZnSnO3, potentially leading to a distinct type of polarization-induced conduction.

AB - We propose crystalline ZnSnO3 as a new channel material for field-effect transistors. By molecular-beam epitaxy on LiNbO3(0001) substrates, we synthesized films of ZnSnO3, which crystallizes in the LiNbO3-type polar structure. Field-effect transistors on ZnSnO3 exhibit n-type operation with field-effect mobility of as high as 45 cm2V-1s-1 at room temperature. Systematic examination of the transistor operation for channels with different Zn/Sn compositional ratios revealed that the observed high-mobility reflects the nature of stoichiometric ZnSnO3 phase. Moreover, we found an indication of coupling of transistor characteristics with intrinsic spontaneous polarization in ZnSnO3, potentially leading to a distinct type of polarization-induced conduction.

UR - http://www.scopus.com/inward/record.url?scp=85047641660&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85047641660&partnerID=8YFLogxK

U2 - 10.1063/1.5034403

DO - 10.1063/1.5034403

M3 - Article

AN - SCOPUS:85047641660

VL - 8

JO - AIP Advances

JF - AIP Advances

SN - 2158-3226

IS - 5

M1 - 055327

ER -

High-mobility field-effect transistor based on crystalline ZnSnO₃ thin films

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