High mobility exceeding 80cm² V^-1 s^-1 in polycrystalline Ta-Doped SnO₂ thin films on glass using anatase TiO₂ seed layers

High-mobility Ta-doped SnO₂ (TTO) thin films were grown on glass substrates by pulsed laser deposition using a seed-layer technique. The use of 10-nm-thick polycrystalline anatase TiO₂ seed layers was found to lead to the preferred growth of (200)-oriented TTO films, resulting in a 30% increase in the carrier density and a more than two times increase in mobility, compared to films grown directly on the glass substrates. The highest mobility obtained was 83 cm² V^-1 s^-1 with a resistivity of 2:8 × 10^-4 Ωcm, whereas the film with the lowest resistivity of 1:8 × 10^-4 Ωcm had a mobility of 60 cm² V^-1 s^-1.