TY - JOUR
T1 - High mobility exceeding 80cm2 V-1 s-1 in polycrystalline Ta-Doped SnO2 thin films on glass using anatase TiO2 seed layers
AU - Nakao, Shoichiro
AU - Yamada, Naoomi
AU - Hitosugi, Taro
AU - Hirose, Yasushi
AU - Shimada, Toshihiro
AU - Hasegawa, Tetsuya
N1 - Copyright:
Copyright 2010 Elsevier B.V., All rights reserved.
PY - 2010/3
Y1 - 2010/3
N2 - High-mobility Ta-doped SnO2 (TTO) thin films were grown on glass substrates by pulsed laser deposition using a seed-layer technique. The use of 10-nm-thick polycrystalline anatase TiO2 seed layers was found to lead to the preferred growth of (200)-oriented TTO films, resulting in a 30% increase in the carrier density and a more than two times increase in mobility, compared to films grown directly on the glass substrates. The highest mobility obtained was 83 cm2 V-1 s-1 with a resistivity of 2:8 × 10-4 Ωcm, whereas the film with the lowest resistivity of 1:8 × 10-4 Ωcm had a mobility of 60 cm2 V-1 s-1.
AB - High-mobility Ta-doped SnO2 (TTO) thin films were grown on glass substrates by pulsed laser deposition using a seed-layer technique. The use of 10-nm-thick polycrystalline anatase TiO2 seed layers was found to lead to the preferred growth of (200)-oriented TTO films, resulting in a 30% increase in the carrier density and a more than two times increase in mobility, compared to films grown directly on the glass substrates. The highest mobility obtained was 83 cm2 V-1 s-1 with a resistivity of 2:8 × 10-4 Ωcm, whereas the film with the lowest resistivity of 1:8 × 10-4 Ωcm had a mobility of 60 cm2 V-1 s-1.
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U2 - 10.1143/APEX.3.031102
DO - 10.1143/APEX.3.031102
M3 - Article
AN - SCOPUS:77949782492
VL - 3
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 3
M1 - 031102
ER -