High mobility exceeding 80cm2 V-1 s-1 in polycrystalline Ta-Doped SnO2 thin films on glass using anatase TiO2 seed layers

Shoichiro Nakao; Naoomi Yamada; Taro Hitosugi; Yasushi Hirose; Toshihiro Shimada; Tetsuya Hasegawa

doi:10.1143/APEX.3.031102

High mobility exceeding 80cm² V^-1 s^-1 in polycrystalline Ta-Doped SnO₂ thin films on glass using anatase TiO₂ seed layers

Shoichiro Nakao, Naoomi Yamada, Taro Hitosugi, Yasushi Hirose, Toshihiro Shimada, Tetsuya Hasegawa

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

High-mobility Ta-doped SnO₂ (TTO) thin films were grown on glass substrates by pulsed laser deposition using a seed-layer technique. The use of 10-nm-thick polycrystalline anatase TiO₂ seed layers was found to lead to the preferred growth of (200)-oriented TTO films, resulting in a 30% increase in the carrier density and a more than two times increase in mobility, compared to films grown directly on the glass substrates. The highest mobility obtained was 83 cm² V^-1 s^-1 with a resistivity of 2:8 × 10^-4 Ωcm, whereas the film with the lowest resistivity of 1:8 × 10^-4 Ωcm had a mobility of 60 cm² V^-1 s^-1.

Original language	English
Article number	031102
Journal	Applied Physics Express
Volume	3
Issue number	3
DOIs	https://doi.org/10.1143/APEX.3.031102
Publication status	Published - 2010 Mar

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/APEX.3.031102

Fingerprint Dive into the research topics of 'High mobility exceeding 80cm2 V-1 s-1 in polycrystalline Ta-Doped SnO2 thin films on glass using anatase TiO2 seed layers'. Together they form a unique fingerprint.

Cite this

@article{f0d06721fdd9468cb9bf94832f80a790,

title = "High mobility exceeding 80cm2 V-1 s-1 in polycrystalline Ta-Doped SnO2 thin films on glass using anatase TiO2 seed layers",

abstract = "High-mobility Ta-doped SnO2 (TTO) thin films were grown on glass substrates by pulsed laser deposition using a seed-layer technique. The use of 10-nm-thick polycrystalline anatase TiO2 seed layers was found to lead to the preferred growth of (200)-oriented TTO films, resulting in a 30% increase in the carrier density and a more than two times increase in mobility, compared to films grown directly on the glass substrates. The highest mobility obtained was 83 cm2 V-1 s-1 with a resistivity of 2:8 × 10-4 Ωcm, whereas the film with the lowest resistivity of 1:8 × 10-4 Ωcm had a mobility of 60 cm2 V-1 s-1.",

author = "Shoichiro Nakao and Naoomi Yamada and Taro Hitosugi and Yasushi Hirose and Toshihiro Shimada and Tetsuya Hasegawa",

year = "2010",

month = mar,

doi = "10.1143/APEX.3.031102",

language = "English",

volume = "3",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "3",

}

TY - JOUR

T1 - High mobility exceeding 80cm2 V-1 s-1 in polycrystalline Ta-Doped SnO2 thin films on glass using anatase TiO2 seed layers

AU - Nakao, Shoichiro

AU - Yamada, Naoomi

AU - Hitosugi, Taro

AU - Hirose, Yasushi

AU - Shimada, Toshihiro

AU - Hasegawa, Tetsuya

PY - 2010/3

Y1 - 2010/3

N2 - High-mobility Ta-doped SnO2 (TTO) thin films were grown on glass substrates by pulsed laser deposition using a seed-layer technique. The use of 10-nm-thick polycrystalline anatase TiO2 seed layers was found to lead to the preferred growth of (200)-oriented TTO films, resulting in a 30% increase in the carrier density and a more than two times increase in mobility, compared to films grown directly on the glass substrates. The highest mobility obtained was 83 cm2 V-1 s-1 with a resistivity of 2:8 × 10-4 Ωcm, whereas the film with the lowest resistivity of 1:8 × 10-4 Ωcm had a mobility of 60 cm2 V-1 s-1.

AB - High-mobility Ta-doped SnO2 (TTO) thin films were grown on glass substrates by pulsed laser deposition using a seed-layer technique. The use of 10-nm-thick polycrystalline anatase TiO2 seed layers was found to lead to the preferred growth of (200)-oriented TTO films, resulting in a 30% increase in the carrier density and a more than two times increase in mobility, compared to films grown directly on the glass substrates. The highest mobility obtained was 83 cm2 V-1 s-1 with a resistivity of 2:8 × 10-4 Ωcm, whereas the film with the lowest resistivity of 1:8 × 10-4 Ωcm had a mobility of 60 cm2 V-1 s-1.

UR - http://www.scopus.com/inward/record.url?scp=77949782492&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77949782492&partnerID=8YFLogxK

U2 - 10.1143/APEX.3.031102

DO - 10.1143/APEX.3.031102

M3 - Article

AN - SCOPUS:77949782492

VL - 3

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 3

M1 - 031102

ER -