High-mobility Ta-doped SnO2 (TTO) thin films were grown on glass substrates by pulsed laser deposition using a seed-layer technique. The use of 10-nm-thick polycrystalline anatase TiO2 seed layers was found to lead to the preferred growth of (200)-oriented TTO films, resulting in a 30% increase in the carrier density and a more than two times increase in mobility, compared to films grown directly on the glass substrates. The highest mobility obtained was 83 cm2 V-1 s-1 with a resistivity of 2:8 × 10-4 Ωcm, whereas the film with the lowest resistivity of 1:8 × 10-4 Ωcm had a mobility of 60 cm2 V-1 s-1.
ASJC Scopus subject areas
- Physics and Astronomy(all)