High mobility exceeding 80cm2 V-1 s-1 in polycrystalline Ta-Doped SnO2 thin films on glass using anatase TiO2 seed layers

Shoichiro Nakao, Naoomi Yamada, Taro Hitosugi, Yasushi Hirose, Toshihiro Shimada, Tetsuya Hasegawa

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    38 Citations (Scopus)

    Abstract

    High-mobility Ta-doped SnO2 (TTO) thin films were grown on glass substrates by pulsed laser deposition using a seed-layer technique. The use of 10-nm-thick polycrystalline anatase TiO2 seed layers was found to lead to the preferred growth of (200)-oriented TTO films, resulting in a 30% increase in the carrier density and a more than two times increase in mobility, compared to films grown directly on the glass substrates. The highest mobility obtained was 83 cm2 V-1 s-1 with a resistivity of 2:8 × 10-4 Ωcm, whereas the film with the lowest resistivity of 1:8 × 10-4 Ωcm had a mobility of 60 cm2 V-1 s-1.

    Original languageEnglish
    Article number031102
    JournalApplied Physics Express
    Volume3
    Issue number3
    DOIs
    Publication statusPublished - 2010 Mar

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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