TY - JOUR
T1 - High mobility and luminescent efficiency in organic single-crystal light-emitting transistors
AU - Bisri, Satria Zulkarnaen
AU - Takenobu, Taishi
AU - Yomogida, Yohei
AU - Shimotani, Hidekazu
AU - Yamao, Takeshi
AU - Hotta, Shu
AU - Iwasa, Yoshihiro
PY - 2009/6/9
Y1 - 2009/6/9
N2 - A high-performance ambipolar light-emitting transistor (LET) that has high hole and electron mobilities and excellent luminescence characteristics is described. By using this device, a conspicuous light-confined edge emission and current-density-dependent spectral evolution are observed. These findings will result in broader utilization of device potential and they provide a promising route for realizing electrically driven organic lasers.
AB - A high-performance ambipolar light-emitting transistor (LET) that has high hole and electron mobilities and excellent luminescence characteristics is described. By using this device, a conspicuous light-confined edge emission and current-density-dependent spectral evolution are observed. These findings will result in broader utilization of device potential and they provide a promising route for realizing electrically driven organic lasers.
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U2 - 10.1002/adfm.200900028
DO - 10.1002/adfm.200900028
M3 - Article
AN - SCOPUS:67649206057
VL - 19
SP - 1728
EP - 1735
JO - Advanced Functional Materials
JF - Advanced Functional Materials
SN - 1616-301X
IS - 11
ER -