High-magnetoresistance tunnel junctions using Co75Fe25 ferromagnetic electrodes

Xiu Feng Han, Tadaomi Daibou, Makoto Kamijo, Kazuya Yaoita, Hitoshi Kubota, Yasuo Ando, Terunobu Miyazaki

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)

Abstract

Tunnel magnetoresistance (TMR) effect and the applied voltage dependence of the TMR ratio in the tunnel junctions Ta(5 nm)/Ni79Fe21(3 nm)/Cu(20 nm)/Ni79Fe21(3 nm)/Ir22Mn78(10 nm)/Co75Fe25(4 nm)/Al(0.8 nm)-oxide/Co75Fe25(4 nm)/Ni79Fe21(20 nm)/Ta(5 nm) were investigated. MR ratio, effective barrier height and width, and breakdown voltage of the junctions can be remarkably enhanced after annealed at 300 °C for an hour using Co75Fe25 as ferromagnetic electrodes and Cu as bottom conduction electrode. High MR ratio of 49.7% at room temperature and 69.1% at 4.2 K for the TMR junctions were observed.

Original languageEnglish
Pages (from-to)L439-L441
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume39
Issue number5 B
DOIs
Publication statusPublished - 2000 Jan 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'High-magnetoresistance tunnel junctions using Co<sub>75</sub>Fe<sub>25</sub> ferromagnetic electrodes'. Together they form a unique fingerprint.

Cite this