Tunnel magnetoresistance (TMR) effect and the applied voltage dependence of the TMR ratio in the tunnel junctions Ta(5 nm)/Ni79Fe21(3 nm)/Cu(20 nm)/Ni79Fe21(3 nm)/Ir22Mn78(10 nm)/Co75Fe25(4 nm)/Al(0.8 nm)-oxide/Co75Fe25(4 nm)/Ni79Fe21(20 nm)/Ta(5 nm) were investigated. MR ratio, effective barrier height and width, and breakdown voltage of the junctions can be remarkably enhanced after annealed at 300 °C for an hour using Co75Fe25 as ferromagnetic electrodes and Cu as bottom conduction electrode. High MR ratio of 49.7% at room temperature and 69.1% at 4.2 K for the TMR junctions were observed.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||5 B|
|Publication status||Published - 2000 Jan 1|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)