High-k/metal gate system and related issues

Masaaki Niwa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Key factors on Hf-based high-k/metal gate (HK/MG) CMOS technology based on conventional gate first process for low operational power application are overviewed. WF tuning derived from ionic property of HK material, process cost, EOT scaling under defect free interface as well as low gate leakage current are issues to be overcome. The most important item is how to control the atomic distribution in the Hf-based HK/MG system, which is requisite for the importunate WF tuning and EOT scaling.

Original languageEnglish
Title of host publicationProceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
EditorsJia Zhou, Ting-Ao Tang
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479932962
DOIs
Publication statusPublished - 2014 Jan 23
Event2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China
Duration: 2014 Oct 282014 Oct 31

Publication series

NameProceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Other

Other2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
CountryChina
CityGuilin
Period14/10/2814/10/31

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Computer Science Applications

Fingerprint Dive into the research topics of 'High-k/metal gate system and related issues'. Together they form a unique fingerprint.

Cite this