High internal quantum efficiency ultraviolet to green luminescence peaks from pseudomorphic m -plane Al1-xInxN epilayers grown on a low defect density m -plane freestanding GaN substrate

S. F. Chichibu, K. Hazu, K. Furusawa, Y. Ishikawa, T. Onuma, T. Ohtomo, H. Ikeda, K. Fujito

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16 Citations (Scopus)

Abstract

Structural and optical qualities of half-a-μm-thick m-plane Al1-xInxN epilayers grown by metalorganic vapor phase epitaxy were remarkably improved via coherent growth on a low defect density m-plane freestanding GaN substrate prepared by hydride vapor phase epitaxy. All the epilayers unexceptionally suffer from uniaxial or biaxial anisotropic in-plane stress. However, full-width at half-maximum values of the x-ray ω-rocking curves were nearly unchanged as the underlayer values being 80 ∼ 150 arc sec for (10 1 ¯ 0) and (10 1 ¯ 2) diffractions with both 〈 0001 〉 and 〈 11 2 ¯ 0 〉 azimuths, as long as pseudomorphic structure was maintained. Such Al1-xInxN epilayers commonly exhibited a broad but predominant luminescence peak in ultraviolet (x ≤ 0.14) to green (x = 0.30) wavelengths. Its equivalent value of the internal quantum efficiency at room temperature was as high as 67% for x = 0.14 and 44% for x = 0.30. Because its high-energy cutoff commonly converged with the bandgap energy, the emission peak is assigned to originate from the extended near-band-edge states with strong carrier localization.

Original languageEnglish
Article number213501
JournalJournal of Applied Physics
Volume116
Issue number21
DOIs
Publication statusPublished - 2014 Dec 7

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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