High integrity SiO 2 gate insulator formed by microwave-excited plasma enhanced chemical vapor deposition for algan/gan hybrid metal-oxide-semiconductor heterojunction field-effect transistor on si substrate

Hiroshi Kambayashi, Takehiko Nomura, Sadahiro Kato, Hirokazu Ueda, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

High quality SiO 2 gate insulator has been demonstrated for GaN metal-oxide-semiconductor (MOS) transistor which has high performance with normally-off operation. The SiO 2 films formed on GaN by microwave-excited plasma enhanced chemical vapor deposition (MW-PECVD) and annealed after deposition exhibits a low-interface state density between SiO 2 and GaN, a high-breakdown field, and a high charge-to-breakdown. The SiO 2 films have been also applied to the gate insulator of AlGaN/GaN hybrid MOS heterojunction field-effect transistor (HFET) on Si substrate. The MOS-HFET show excellent properties with the threshold voltage of 4.2 V and the maximum field-effect mobility of 161 cm 2 V -1 s -1.

Original languageEnglish
Article number04DF03
JournalJapanese journal of applied physics
Volume51
Issue number4 PART 2
DOIs
Publication statusPublished - 2012 Apr 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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