High hole mobility exceeding 4 cm2/Vs in top-gate C 8-BTBT field-effect transistors processed by spin coating

Fumio Mochizuki; Toshiyuki Endo; Takashi Nagase; Takashi Kobayashi; Kazuo Takimiya; Masaaki Ikeda; Hiroyoshi Naito

High hole mobility exceeding 4 cm²/Vs in top-gate C ₈-BTBT field-effect transistors processed by spin coating

Fumio Mochizuki, Toshiyuki Endo, Takashi Nagase, Takashi Kobayashi, Kazuo Takimiya, Masaaki Ikeda, Hiroyoshi Naito

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have fabricated 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene (C₈-BTBT)-based organic field-effect transistors (OFETs) with top-gate configurations having fluoropolymer gate insulators by spin-coating processes. Top-gate OFETs with spin-coated polycrystalline C₈-BTBT films exhibit high maximum field-effect mobility of 4.1 cm²/Vs and low average threshold voltage of -7.0 V.

Original language	English
Title of host publication	Society for Information Display - 18th International Display Workshops 2011, IDW'11
Pages	85-88
Number of pages	4
Volume	1
Publication status	Published - 2011 Dec 1
Externally published	Yes
Event	18th International Display Workshops 2011, IDW 2011 - Nagoya, Japan Duration: 2011 Dec 7 → 2011 Dec 9

Other

Other	18th International Display Workshops 2011, IDW 2011
Country	Japan
City	Nagoya
Period	11/12/7 → 11/12/9

ASJC Scopus subject areas

Computer Vision and Pattern Recognition
Human-Computer Interaction
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Radiology Nuclear Medicine and imaging

UN SDGs

This output contributes to the following Sustainable Development Goal(s)

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High hole mobility exceeding 4 cm²/Vs in top-gate C ₈-BTBT field-effect transistors processed by spin coating. / Mochizuki, Fumio; Endo, Toshiyuki; Nagase, Takashi; Kobayashi, Takashi; Takimiya, Kazuo; Ikeda, Masaaki; Naito, Hiroyoshi.

Society for Information Display - 18th International Display Workshops 2011, IDW'11. Vol. 1 2011. p. 85-88.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Mochizuki, F, Endo, T, Nagase, T, Kobayashi, T, Takimiya, K, Ikeda, M & Naito, H 2011, High hole mobility exceeding 4 cm²/Vs in top-gate C ₈-BTBT field-effect transistors processed by spin coating. in Society for Information Display - 18th International Display Workshops 2011, IDW'11. vol. 1, pp. 85-88, 18th International Display Workshops 2011, IDW 2011, Nagoya, Japan, 11/12/7.

@inproceedings{8d517ff9da6b45469a47b20e12b094f7,

title = "High hole mobility exceeding 4 cm2/Vs in top-gate C 8-BTBT field-effect transistors processed by spin coating",

abstract = "We have fabricated 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene (C8-BTBT)-based organic field-effect transistors (OFETs) with top-gate configurations having fluoropolymer gate insulators by spin-coating processes. Top-gate OFETs with spin-coated polycrystalline C8-BTBT films exhibit high maximum field-effect mobility of 4.1 cm2/Vs and low average threshold voltage of -7.0 V.",

author = "Fumio Mochizuki and Toshiyuki Endo and Takashi Nagase and Takashi Kobayashi and Kazuo Takimiya and Masaaki Ikeda and Hiroyoshi Naito",

year = "2011",

month = dec,

day = "1",

language = "English",

isbn = "9781622761906",

volume = "1",

pages = "85--88",

booktitle = "Society for Information Display - 18th International Display Workshops 2011, IDW'11",

note = "18th International Display Workshops 2011, IDW 2011 ; Conference date: 07-12-2011 Through 09-12-2011",

}

TY - GEN

T1 - High hole mobility exceeding 4 cm2/Vs in top-gate C 8-BTBT field-effect transistors processed by spin coating

AU - Mochizuki, Fumio

AU - Endo, Toshiyuki

AU - Nagase, Takashi

AU - Kobayashi, Takashi

AU - Takimiya, Kazuo

AU - Ikeda, Masaaki

AU - Naito, Hiroyoshi

PY - 2011/12/1

Y1 - 2011/12/1

N2 - We have fabricated 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene (C8-BTBT)-based organic field-effect transistors (OFETs) with top-gate configurations having fluoropolymer gate insulators by spin-coating processes. Top-gate OFETs with spin-coated polycrystalline C8-BTBT films exhibit high maximum field-effect mobility of 4.1 cm2/Vs and low average threshold voltage of -7.0 V.

AB - We have fabricated 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene (C8-BTBT)-based organic field-effect transistors (OFETs) with top-gate configurations having fluoropolymer gate insulators by spin-coating processes. Top-gate OFETs with spin-coated polycrystalline C8-BTBT films exhibit high maximum field-effect mobility of 4.1 cm2/Vs and low average threshold voltage of -7.0 V.

UR - http://www.scopus.com/inward/record.url?scp=84870678279&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84870678279&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84870678279

SN - 9781622761906

VL - 1

SP - 85

EP - 88

BT - Society for Information Display - 18th International Display Workshops 2011, IDW'11

T2 - 18th International Display Workshops 2011, IDW 2011

Y2 - 7 December 2011 through 9 December 2011

ER -