High hole mobility exceeding 4 cm2/Vs in top-gate C 8-BTBT field-effect transistors processed by spin coating

Fumio Mochizuki; Toshiyuki Endo; Takashi Nagase; Takashi Kobayashi; Kazuo Takimiya; Masaaki Ikeda; Hiroyoshi Naito

High hole mobility exceeding 4 cm²/Vs in top-gate C ₈-BTBT field-effect transistors processed by spin coating

Fumio Mochizuki, Toshiyuki Endo, Takashi Nagase, Takashi Kobayashi, Kazuo Takimiya, Masaaki Ikeda, Hiroyoshi Naito

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have fabricated 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene (C₈-BTBT)-based organic field-effect transistors (OFETs) with top-gate configurations having fluoropolymer gate insulators by spin-coating processes. Top-gate OFETs with spin-coated polycrystalline C₈-BTBT films exhibit high maximum field-effect mobility of 4.1 cm²/Vs and low average threshold voltage of -7.0 V.

Original language	English
Title of host publication	Society for Information Display - 18th International Display Workshops 2011, IDW'11
Pages	85-88
Number of pages	4
Volume	1
Publication status	Published - 2011 Dec 1
Externally published	Yes
Event	18th International Display Workshops 2011, IDW 2011 - Nagoya, Japan Duration: 2011 Dec 7 → 2011 Dec 9

Other

Other	18th International Display Workshops 2011, IDW 2011
Country/Territory	Japan
City	Nagoya
Period	11/12/7 → 11/12/9

ASJC Scopus subject areas

Computer Vision and Pattern Recognition
Human-Computer Interaction
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Radiology Nuclear Medicine and imaging

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

High hole mobility exceeding 4 cm²/Vs in top-gate C ₈-BTBT field-effect transistors processed by spin coating. / Mochizuki, Fumio; Endo, Toshiyuki; Nagase, Takashi; Kobayashi, Takashi; Takimiya, Kazuo; Ikeda, Masaaki; Naito, Hiroyoshi.

Society for Information Display - 18th International Display Workshops 2011, IDW'11. Vol. 1 2011. p. 85-88.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Mochizuki, F, Endo, T, Nagase, T, Kobayashi, T, Takimiya, K, Ikeda, M & Naito, H 2011, High hole mobility exceeding 4 cm²/Vs in top-gate C ₈-BTBT field-effect transistors processed by spin coating. in Society for Information Display - 18th International Display Workshops 2011, IDW'11. vol. 1, pp. 85-88, 18th International Display Workshops 2011, IDW 2011, Nagoya, Japan, 11/12/7.

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abstract = "We have fabricated 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene (C8-BTBT)-based organic field-effect transistors (OFETs) with top-gate configurations having fluoropolymer gate insulators by spin-coating processes. Top-gate OFETs with spin-coated polycrystalline C8-BTBT films exhibit high maximum field-effect mobility of 4.1 cm2/Vs and low average threshold voltage of -7.0 V.",

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AU - Nagase, Takashi

AU - Kobayashi, Takashi

AU - Takimiya, Kazuo

AU - Ikeda, Masaaki

AU - Naito, Hiroyoshi

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N2 - We have fabricated 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene (C8-BTBT)-based organic field-effect transistors (OFETs) with top-gate configurations having fluoropolymer gate insulators by spin-coating processes. Top-gate OFETs with spin-coated polycrystalline C8-BTBT films exhibit high maximum field-effect mobility of 4.1 cm2/Vs and low average threshold voltage of -7.0 V.

AB - We have fabricated 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene (C8-BTBT)-based organic field-effect transistors (OFETs) with top-gate configurations having fluoropolymer gate insulators by spin-coating processes. Top-gate OFETs with spin-coated polycrystalline C8-BTBT films exhibit high maximum field-effect mobility of 4.1 cm2/Vs and low average threshold voltage of -7.0 V.

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