High hole mobility exceeding 4 cm2/Vs in top-gate C 8-BTBT field-effect transistors processed by spin coating

Fumio Mochizuki, Toshiyuki Endo, Takashi Nagase, Takashi Kobayashi, Kazuo Takimiya, Masaaki Ikeda, Hiroyoshi Naito

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We have fabricated 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene (C8-BTBT)-based organic field-effect transistors (OFETs) with top-gate configurations having fluoropolymer gate insulators by spin-coating processes. Top-gate OFETs with spin-coated polycrystalline C8-BTBT films exhibit high maximum field-effect mobility of 4.1 cm2/Vs and low average threshold voltage of -7.0 V.

Original languageEnglish
Title of host publicationSociety for Information Display - 18th International Display Workshops 2011, IDW'11
Number of pages4
Publication statusPublished - 2011 Dec 1
Externally publishedYes
Event18th International Display Workshops 2011, IDW 2011 - Nagoya, Japan
Duration: 2011 Dec 72011 Dec 9


Other18th International Display Workshops 2011, IDW 2011

ASJC Scopus subject areas

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

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