High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth

Shinobu Takehiro, Masao Sakuraba, Toshiaki Tsuchiya, Junichi Murota

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

High performance high Ge fraction intrinsic Si1 - xGex-heterochannel MOSFETs with embedded Si1 - xGex source/drain electrodes fabricated by the use of a low thermal budget process below 700 °C are demonstrated for the first time. The carrier mobility is very high in spite of high concentration impurity doping to the substrates for the threshold voltage control. It is suggested that this superior device characteristic is caused by suppression of impurity diffusion into the Si1 - xGex-heterochannel, the high Ge fraction in the Si1 - xGex-heterochannel and compressive stress applied to the Si1 - xGex-heterochannel due to the embedded Si1 - xGex source/drain.

Original languageEnglish
Pages (from-to)346-349
Number of pages4
JournalThin Solid Films
Volume517
Issue number1
DOIs
Publication statusPublished - 2008 Nov 3

Keywords

  • Carrier mobility
  • Embedded SiGe source/drain
  • In-situ doping
  • Intrinsic channel
  • SiGe epitaxial growth
  • SiGe-heterochannel MOSFET

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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