High Gauge Factor Strain Sensors Based on Vanadium Doped Molybedenum Disulfide 2D Films

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper reports the piezoresistive performance of two-dimensional (2D) material of vanadium (V) doped MoS2 films. A novel method for forming large-area and uniform 2D film is based on sulfurization of a Mo thin film. I-V characteristics indicate that V atoms doping indeed decreases the resistivity of MoS2. Strain sensors based on V-doped MoS2 resistive elements are fabricated. By using a four-point bending method, a gauge factor (GF) of 140 for V-doped MoS2 is obtained. This demonstration of substitutional doping in MoS2 could help in realizing high sensitive strain sensing applications.

Original languageEnglish
Title of host publication2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems, MEMS 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages335-338
Number of pages4
ISBN (Electronic)9781728116105
DOIs
Publication statusPublished - 2019 Jan
Event32nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2019 - Seoul, Korea, Republic of
Duration: 2019 Jan 272019 Jan 31

Publication series

NameProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Volume2019-January
ISSN (Print)1084-6999

Conference

Conference32nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2019
Country/TerritoryKorea, Republic of
CitySeoul
Period19/1/2719/1/31

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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