High frequency reverse conducting GTO thyristor

O. Yamada, M. Watanabe, H. Kakigi, T. Koga, Y. Takahashi, H. Kirihata

Research output: Contribution to conferencePaperpeer-review

3 Citations (Scopus)

Abstract

A high-frequency reverse conducting gate-turn-off (GTO) thyristor (RC-GTO) was developed as an attempt to increase the switching frequency of 2.5-kV class RC-GTOs up to 1.5 kHz. A turn-off capability of 2000 A at a snubber capacitance of 2 μF was realized by a novel two-step gate structure. This device has a high dv/dt capability of 1000 V/μs at turn-off as well as a high di/dt capability of 600 A/μs at turn-on, and it has good switching performance in a 1.5-Hz pulse-width-modulated (PWM) inverter simulation. These characteristics are realized by adopting lifetime control with platinum.

Original languageEnglish
Pages256-261
Number of pages6
Publication statusPublished - 1990 Dec 1
Externally publishedYes
EventProceedings of the 2nd International Symposium on Power Semiconductor Devices and ICs - ISPSD '90 - Tokyo, Jpn
Duration: 1990 Apr 41990 Apr 6

Other

OtherProceedings of the 2nd International Symposium on Power Semiconductor Devices and ICs - ISPSD '90
CityTokyo, Jpn
Period90/4/490/4/6

ASJC Scopus subject areas

  • Engineering(all)

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