A high-frequency reverse conducting gate-turn-off (GTO) thyristor (RC-GTO) was developed as an attempt to increase the switching frequency of 2.5-kV class RC-GTOs up to 1.5 kHz. A turn-off capability of 2000 A at a snubber capacitance of 2 μF was realized by a novel two-step gate structure. This device has a high dv/dt capability of 1000 V/μs at turn-off as well as a high di/dt capability of 600 A/μs at turn-on, and it has good switching performance in a 1.5-Hz pulse-width-modulated (PWM) inverter simulation. These characteristics are realized by adopting lifetime control with platinum.
|Number of pages||6|
|Publication status||Published - 1990 Dec 1|
|Event||Proceedings of the 2nd International Symposium on Power Semiconductor Devices and ICs - ISPSD '90 - Tokyo, Jpn|
Duration: 1990 Apr 4 → 1990 Apr 6
|Other||Proceedings of the 2nd International Symposium on Power Semiconductor Devices and ICs - ISPSD '90|
|Period||90/4/4 → 90/4/6|
ASJC Scopus subject areas