High-frequency level-up shifter based on 0.18μm vertical metal-oxide-semiconductor field-effect transistors with 70% reduction of overshoot voltage above power supply voltage

Satoru Tanoi, Tetsuo Endoh

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

A high-frequency and high-voltage-tolerant level-up shifter is proposed. In the design, a voltage limiter with a preset and a dynamic biasing feedback circuit are introduced. In a typical simulation, our circuit based on 0.18μm vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) shows a 70% reduction of the overshoot voltage of the MOSFETs above the power supply voltage (1.8 V VDD) compared with a conventional circuit. It realizes a typical operation frequency of 164MHz when the maximum voltage applied to all MOSFETs is limited to 1.8V. The maximum achievable operation frequency is more than 1.6 times that of a conventional circuit. The variation of the maximum voltage applied to the MOSFETs in our circuit is also reduced by about 24% compared with that of the conventional circuit in a process-corner simulation with the variation of VDD and temperature.

Original languageEnglish
Article number04DE03
JournalJapanese journal of applied physics
Volume54
Issue number4
DOIs
Publication statusPublished - 2015 Apr 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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