High frequency lamb wave resonator using LiNbO3 thin film by CVD

Michio Kadota; Takashi Ogami; Kansho Yamamoto; Hikari Tochishita

doi:10.1109/FREQ.2009.5168145

High frequency lamb wave resonator using LiNbO3 thin film by CVD

Michio Kadota, Takashi Ogami, Kansho Yamamoto, Hikari Tochishita

ENG - Robotics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

It has been considered that it is difficult to realize higher frequency devices than 3 GHz by using conventional surface acoustic wave (SAW) substrate. In order to realize a high frequency device, there are some methods such as using a high velocity substrate or shortening a wavelength (λ) of an interdigital transducer (IDT). However, almost of all conventional SAW substrates have a low velocity and it is difficult to shorten the λ of IDT because of too narrow fingers. A Lamb wave has a high velocity and a large coupling factor when a LiNbO₃ plate is thiner than 0.2λ. As it is difficult to realize a very thin LiNbO₃ crystal plate, author use a thin epitaxial LiNbO₃ film deposited by a chemical vapor deposition (CVD). As the result, authors realized a high frequency 4.5 GHz of Lamb wave resonator composed of an electrode/thin epitaxial LiNbO₃ film/air gap/base-substrate for the first time. The resonator showed a high velocity of 14,000 m/s, a large impedance ratio of 52 dB, and a wide bandwidth of 7.2 % without spurious response due to SH0 mode.

Original language	English
Title of host publication	2009 IEEE International Frequency Control Symposium Joint with the 22nd European Frequency and Time Forum
Pages	75-78
Number of pages	4
DOIs	https://doi.org/10.1109/FREQ.2009.5168145
Publication status	Published - 2009 Nov 19
Event	2009 IEEE International Frequency Control Symposium Joint with the 22nd European Frequency and Time Forum - Besancon, France Duration: 2009 Apr 20 → 2009 Apr 24

Publication series

Name	2009 IEEE International Frequency Control Symposium Joint with the 22nd European Frequency and Time Forum

Other

Other	2009 IEEE International Frequency Control Symposium Joint with the 22nd European Frequency and Time Forum
Country	France
City	Besancon
Period	09/4/20 → 09/4/24

Keywords

4.5GHz
CVD
Lamb wave
LiNbO film
Resonator
Twin epitaxial

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

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Cite this

Kadota, M., Ogami, T., Yamamoto, K., & Tochishita, H. (2009). High frequency lamb wave resonator using LiNbO3 thin film by CVD. In 2009 IEEE International Frequency Control Symposium Joint with the 22nd European Frequency and Time Forum (pp. 75-78). [5168145] (2009 IEEE International Frequency Control Symposium Joint with the 22nd European Frequency and Time Forum). https://doi.org/10.1109/FREQ.2009.5168145

High frequency lamb wave resonator using LiNbO3 thin film by CVD. / Kadota, Michio; Ogami, Takashi; Yamamoto, Kansho; Tochishita, Hikari.

2009 IEEE International Frequency Control Symposium Joint with the 22nd European Frequency and Time Forum. 2009. p. 75-78 5168145 (2009 IEEE International Frequency Control Symposium Joint with the 22nd European Frequency and Time Forum).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kadota, M, Ogami, T, Yamamoto, K & Tochishita, H 2009, High frequency lamb wave resonator using LiNbO3 thin film by CVD. in 2009 IEEE International Frequency Control Symposium Joint with the 22nd European Frequency and Time Forum., 5168145, 2009 IEEE International Frequency Control Symposium Joint with the 22nd European Frequency and Time Forum, pp. 75-78, 2009 IEEE International Frequency Control Symposium Joint with the 22nd European Frequency and Time Forum, Besancon, France, 09/4/20. https://doi.org/10.1109/FREQ.2009.5168145

Kadota M, Ogami T, Yamamoto K, Tochishita H. High frequency lamb wave resonator using LiNbO3 thin film by CVD. In 2009 IEEE International Frequency Control Symposium Joint with the 22nd European Frequency and Time Forum. 2009. p. 75-78. 5168145. (2009 IEEE International Frequency Control Symposium Joint with the 22nd European Frequency and Time Forum). https://doi.org/10.1109/FREQ.2009.5168145

Kadota, Michio ; Ogami, Takashi ; Yamamoto, Kansho ; Tochishita, Hikari. / High frequency lamb wave resonator using LiNbO3 thin film by CVD. 2009 IEEE International Frequency Control Symposium Joint with the 22nd European Frequency and Time Forum. 2009. pp. 75-78 (2009 IEEE International Frequency Control Symposium Joint with the 22nd European Frequency and Time Forum).

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AB - It has been considered that it is difficult to realize higher frequency devices than 3 GHz by using conventional surface acoustic wave (SAW) substrate. In order to realize a high frequency device, there are some methods such as using a high velocity substrate or shortening a wavelength (λ) of an interdigital transducer (IDT). However, almost of all conventional SAW substrates have a low velocity and it is difficult to shorten the λ of IDT because of too narrow fingers. A Lamb wave has a high velocity and a large coupling factor when a LiNbO3 plate is thiner than 0.2λ. As it is difficult to realize a very thin LiNbO3 crystal plate, author use a thin epitaxial LiNbO3 film deposited by a chemical vapor deposition (CVD). As the result, authors realized a high frequency 4.5 GHz of Lamb wave resonator composed of an electrode/thin epitaxial LiNbO3 film/air gap/base-substrate for the first time. The resonator showed a high velocity of 14,000 m/s, a large impedance ratio of 52 dB, and a wide bandwidth of 7.2 % without spurious response due to SH0 mode.

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