TY - GEN
T1 - High frequency lamb wave resonator using LiNbO3 thin film by CVD
AU - Kadota, Michio
AU - Ogami, Takashi
AU - Yamamoto, Kansho
AU - Tochishita, Hikari
PY - 2009/11/19
Y1 - 2009/11/19
N2 - It has been considered that it is difficult to realize higher frequency devices than 3 GHz by using conventional surface acoustic wave (SAW) substrate. In order to realize a high frequency device, there are some methods such as using a high velocity substrate or shortening a wavelength (λ) of an interdigital transducer (IDT). However, almost of all conventional SAW substrates have a low velocity and it is difficult to shorten the λ of IDT because of too narrow fingers. A Lamb wave has a high velocity and a large coupling factor when a LiNbO3 plate is thiner than 0.2λ. As it is difficult to realize a very thin LiNbO3 crystal plate, author use a thin epitaxial LiNbO3 film deposited by a chemical vapor deposition (CVD). As the result, authors realized a high frequency 4.5 GHz of Lamb wave resonator composed of an electrode/thin epitaxial LiNbO3 film/air gap/base-substrate for the first time. The resonator showed a high velocity of 14,000 m/s, a large impedance ratio of 52 dB, and a wide bandwidth of 7.2 % without spurious response due to SH0 mode.
AB - It has been considered that it is difficult to realize higher frequency devices than 3 GHz by using conventional surface acoustic wave (SAW) substrate. In order to realize a high frequency device, there are some methods such as using a high velocity substrate or shortening a wavelength (λ) of an interdigital transducer (IDT). However, almost of all conventional SAW substrates have a low velocity and it is difficult to shorten the λ of IDT because of too narrow fingers. A Lamb wave has a high velocity and a large coupling factor when a LiNbO3 plate is thiner than 0.2λ. As it is difficult to realize a very thin LiNbO3 crystal plate, author use a thin epitaxial LiNbO3 film deposited by a chemical vapor deposition (CVD). As the result, authors realized a high frequency 4.5 GHz of Lamb wave resonator composed of an electrode/thin epitaxial LiNbO3 film/air gap/base-substrate for the first time. The resonator showed a high velocity of 14,000 m/s, a large impedance ratio of 52 dB, and a wide bandwidth of 7.2 % without spurious response due to SH0 mode.
KW - 4.5GHz
KW - CVD
KW - Lamb wave
KW - LiNbO film
KW - Resonator
KW - Twin epitaxial
UR - http://www.scopus.com/inward/record.url?scp=70449495675&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=70449495675&partnerID=8YFLogxK
U2 - 10.1109/FREQ.2009.5168145
DO - 10.1109/FREQ.2009.5168145
M3 - Conference contribution
AN - SCOPUS:70449495675
SN - 9781424435104
T3 - 2009 IEEE International Frequency Control Symposium Joint with the 22nd European Frequency and Time Forum
SP - 75
EP - 78
BT - 2009 IEEE International Frequency Control Symposium Joint with the 22nd European Frequency and Time Forum
T2 - 2009 IEEE International Frequency Control Symposium Joint with the 22nd European Frequency and Time Forum
Y2 - 20 April 2009 through 24 April 2009
ER -