TY - JOUR
T1 - High-frequency Lamb wave device composed of LiNbO3 thin film
AU - Kadota, Michio
AU - Ogami, Takashi
AU - Yamamoto, Kansho
AU - Negoro, Yasuhiro
AU - Tochishita, Hikari
PY - 2009/7/1
Y1 - 2009/7/1
N2 - It has been considered that it is difficult to realize a high-frequency device of 3GHz or more, for instance, for a fourth generation mobile phone system in Japan, using a conventional surface acoustic wave (SAW) substrate. In this study, we attempted to fabricate a highfrequency resonator using Lamb waves, which has a high velocity and consists of a thin LiNbO3 film deposited by chemical vapor deposition (CVD). As a result, a 1-port Lamb wave resonator composed of an electrode/thin epitaxial LiNbO3 film/air-gap/base substrate was fabricated. The measured resonator has a high resonant frequency of 4.5 GHz, which corresponds to a very high velocity of 14,000 m/s, a large impedance ratio of 52dB, and a relatively wide bandwidth of 7.2%.
AB - It has been considered that it is difficult to realize a high-frequency device of 3GHz or more, for instance, for a fourth generation mobile phone system in Japan, using a conventional surface acoustic wave (SAW) substrate. In this study, we attempted to fabricate a highfrequency resonator using Lamb waves, which has a high velocity and consists of a thin LiNbO3 film deposited by chemical vapor deposition (CVD). As a result, a 1-port Lamb wave resonator composed of an electrode/thin epitaxial LiNbO3 film/air-gap/base substrate was fabricated. The measured resonator has a high resonant frequency of 4.5 GHz, which corresponds to a very high velocity of 14,000 m/s, a large impedance ratio of 52dB, and a relatively wide bandwidth of 7.2%.
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U2 - 10.1143/JJAP.48.07GG08
DO - 10.1143/JJAP.48.07GG08
M3 - Article
AN - SCOPUS:72049101470
VL - 48
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 7 PART 2
M1 - 07GG08
ER -