High-frequency Lamb wave device composed of LiNbO3 thin film

Michio Kadota, Takashi Ogami, Kansho Yamamoto, Yasuhiro Negoro, Hikari Tochishita

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

It has been considered that it is difficult to realize a high-frequency device of 3GHz or more, for instance, for a fourth generation mobile phone system in Japan, using a conventional surface acoustic wave (SAW) substrate. In this study, we attempted to fabricate a highfrequency resonator using Lamb waves, which has a high velocity and consists of a thin LiNbO3 film deposited by chemical vapor deposition (CVD). As a result, a 1-port Lamb wave resonator composed of an electrode/thin epitaxial LiNbO3 film/air-gap/base substrate was fabricated. The measured resonator has a high resonant frequency of 4.5 GHz, which corresponds to a very high velocity of 14,000 m/s, a large impedance ratio of 52dB, and a relatively wide bandwidth of 7.2%.

Original languageEnglish
Article number07GG08
JournalJapanese journal of applied physics
Volume48
Issue number7 PART 2
DOIs
Publication statusPublished - 2009 Jul 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Kadota, M., Ogami, T., Yamamoto, K., Negoro, Y., & Tochishita, H. (2009). High-frequency Lamb wave device composed of LiNbO3 thin film. Japanese journal of applied physics, 48(7 PART 2), [07GG08]. https://doi.org/10.1143/JJAP.48.07GG08