High figure of merit (MgHf)xAl1-xN thin films for miniaturizing vibrational energy harvesters

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Abstract

In this paper, we report our development of piezoelectric MgHf co-doped AlN films with high power figure of merit (FoM) for vibrational energy harvesters (VEHs). The (MgHf)xAl1-xN films were deposited on Pt/Ti/SOI substrates by reactive ion-beam sputtering AlN and MgHf targets simultaneously. These studies revealed that we achieved a high FoM of 22.3 GPa at x = 0.12, increasing three-fold that of the pure AlN. Our micro-machined energy harvester exploiting the developed (MgHf)0.12Al0.88N films provided the highest normalized power density (NPD) of 12.04 mW.cm-3.g-2 among the state-of-the-art piezoelectric VEHs. The results opened the way for the development of high-performance VEHs using in wireless sensors network.

Original languageEnglish
Article number012018
JournalJournal of Physics: Conference Series
Volume1052
Issue number1
DOIs
Publication statusPublished - 2018 Jul 26
Event17th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications, PowerMEMS 2017 - Kanazawa, Japan
Duration: 2017 Nov 142017 Nov 17

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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