Ni nanowires fabricated on a GaAs substrate, which have width narrower than 500 nm and thickness 50 nm, showed an antiferromagnetic-like domain structure. Many Ni nanowires fabricated on GaAs using the electron beam lithography technique have been studied by electron spin resonance (ESR). Splitting of ESR signals in the frequency-field diagram was observed around 57 GHz, although only a ferromagnetic resonance mode was observed for other frequencies. This mode is suggested to be an antiferromagnetic resonance related to the domain structure on the Ni nanowires.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering