High field magnetoresistance and ESR measurements on Ni stripes on GaAs substrate

A. Matsuo, M. Taki, S. A. Haque, Y. Yamamoto, T. Kikutani, S. Yamada, H. Nojiri, M. Motokawa, H. Hori

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Ni nanowires fabricated on a GaAs substrate, which have width narrower than 500 nm and thickness 50 nm, showed an antiferromagnetic-like domain structure. Many Ni nanowires fabricated on GaAs using the electron beam lithography technique have been studied by electron spin resonance (ESR). Splitting of ESR signals in the frequency-field diagram was observed around 57 GHz, although only a ferromagnetic resonance mode was observed for other frequencies. This mode is suggested to be an antiferromagnetic resonance related to the domain structure on the Ni nanowires.

Original languageEnglish
Pages (from-to)298-301
Number of pages4
JournalPhysica B: Condensed Matter
Volume294-295
DOIs
Publication statusPublished - 2001 Jan

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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