High field magnetoresistance and de Haas-van Alphen effect in LaRu 2Al10

Masahito Sakoda; Shuhei Tanaka; Eiichi Matsuoka; Hitoshi Sugawara; Hisatomo Harima; Fuminori Honda; Rikio Settai; Yoshichika Onuki; Tatsuma D. Matsuda; Yoshinori Haga

doi:10.1143/JPSJ.80.084716

High field magnetoresistance and de Haas-van Alphen effect in LaRu ₂Al₁₀

Masahito Sakoda, Shuhei Tanaka, Eiichi Matsuoka, Hitoshi Sugawara, Hisatomo Harima, Fuminori Honda, Rikio Settai, Yoshichika Onuki, Tatsuma D. Matsuda, Yoshinori Haga

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We have measured the magnetoresistance and de Haas-van Alphen (dHvA) effect in LaRu₂Al₁₀, which is a reference compound of CeRu ₂Al₁₀ that exhibits an unusual transition at T₀ 27K. The magnetoresistance increases with increasing magnetic field at low temperatures in the wide field directions, suggesting that LaRu ₂Al₁₀ is a compensated metal without an open orbit. From the dHvA experiments, about three dHvA frequency branches whose cyclotron effective masses are close to 1m₀ (m₀: rest mass of an electron) were detected. The observed dHvA branches for the main Fermi surface are well explained by the results of band structure calculation based on a full potential linearized augmented-plane-wave (FLAPW) method and local-density approximation (LDA), that demonstrates the multiply connected Fermi surface with no nesting property in LaRu₂Al₁₀.

Original language	English
Article number	084716
Journal	journal of the physical society of japan
Volume	80
Issue number	8
DOIs	https://doi.org/10.1143/JPSJ.80.084716
Publication status	Published - 2011 Aug

Keywords

Band structure calculation
De Haas-van Alphen effect
Fermi surface
LaRuAl
Magnetoresistance
Single crystal

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1143/JPSJ.80.084716

Cite this

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title = "High field magnetoresistance and de Haas-van Alphen effect in LaRu 2Al10",

abstract = "We have measured the magnetoresistance and de Haas-van Alphen (dHvA) effect in LaRu2Al10, which is a reference compound of CeRu 2Al10 that exhibits an unusual transition at T0 27K. The magnetoresistance increases with increasing magnetic field at low temperatures in the wide field directions, suggesting that LaRu 2Al10 is a compensated metal without an open orbit. From the dHvA experiments, about three dHvA frequency branches whose cyclotron effective masses are close to 1m0 (m0: rest mass of an electron) were detected. The observed dHvA branches for the main Fermi surface are well explained by the results of band structure calculation based on a full potential linearized augmented-plane-wave (FLAPW) method and local-density approximation (LDA), that demonstrates the multiply connected Fermi surface with no nesting property in LaRu2Al10.",

keywords = "Band structure calculation, De Haas-van Alphen effect, Fermi surface, LaRuAl, Magnetoresistance, Single crystal",

author = "Masahito Sakoda and Shuhei Tanaka and Eiichi Matsuoka and Hitoshi Sugawara and Hisatomo Harima and Fuminori Honda and Rikio Settai and Yoshichika Onuki and Matsuda, {Tatsuma D.} and Yoshinori Haga",

year = "2011",

month = aug,

doi = "10.1143/JPSJ.80.084716",

language = "English",

volume = "80",

journal = "Journal of the Physical Society of Japan",

issn = "0031-9015",

publisher = "Physical Society of Japan",

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T1 - High field magnetoresistance and de Haas-van Alphen effect in LaRu 2Al10

AU - Sakoda, Masahito

AU - Tanaka, Shuhei

AU - Matsuoka, Eiichi

AU - Sugawara, Hitoshi

AU - Harima, Hisatomo

AU - Honda, Fuminori

AU - Settai, Rikio

AU - Onuki, Yoshichika

AU - Matsuda, Tatsuma D.

AU - Haga, Yoshinori

PY - 2011/8

Y1 - 2011/8

N2 - We have measured the magnetoresistance and de Haas-van Alphen (dHvA) effect in LaRu2Al10, which is a reference compound of CeRu 2Al10 that exhibits an unusual transition at T0 27K. The magnetoresistance increases with increasing magnetic field at low temperatures in the wide field directions, suggesting that LaRu 2Al10 is a compensated metal without an open orbit. From the dHvA experiments, about three dHvA frequency branches whose cyclotron effective masses are close to 1m0 (m0: rest mass of an electron) were detected. The observed dHvA branches for the main Fermi surface are well explained by the results of band structure calculation based on a full potential linearized augmented-plane-wave (FLAPW) method and local-density approximation (LDA), that demonstrates the multiply connected Fermi surface with no nesting property in LaRu2Al10.

AB - We have measured the magnetoresistance and de Haas-van Alphen (dHvA) effect in LaRu2Al10, which is a reference compound of CeRu 2Al10 that exhibits an unusual transition at T0 27K. The magnetoresistance increases with increasing magnetic field at low temperatures in the wide field directions, suggesting that LaRu 2Al10 is a compensated metal without an open orbit. From the dHvA experiments, about three dHvA frequency branches whose cyclotron effective masses are close to 1m0 (m0: rest mass of an electron) were detected. The observed dHvA branches for the main Fermi surface are well explained by the results of band structure calculation based on a full potential linearized augmented-plane-wave (FLAPW) method and local-density approximation (LDA), that demonstrates the multiply connected Fermi surface with no nesting property in LaRu2Al10.

KW - Band structure calculation

KW - De Haas-van Alphen effect

KW - Fermi surface

KW - LaRuAl

KW - Magnetoresistance

KW - Single crystal

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