High energy-resolution EELS study of the electronic structure of boron nitride cones

M. Terauchi, M. Kawana, M. Tanaka, K. Suzuki, A. Ogino, K. Kimura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Electron energy-loss spectra were obtained from a single boron-nitride cone (BN cone) with an apex angle of 20 degrees, which is made of curved BN layers. The spectra obtained from the tip region showed the π plasmon peak at 7.4 eV, which is smaller than that of bulk hexagonal boron-nitride (h-BN) composed of flat BN layers. The smaller π plasmon energy indicates that the bandgap energy of the BN cone is smaller than that of h-BN. The intensity distribution of the π+σ plasmon peak is explained by the surface loss-function. The B K-shell electron excitation spectra were obtained from the bottom edge region. The spectra showed additional peak intensity compared with that of bulk h-BN.

Original languageEnglish
Title of host publicationNanonetwork Materials
Subtitle of host publicationFullerenes, Nanotubes, and Related Systems
EditorsTsuneya Ando, Yoshihiro Iwasawa, Koichi Kikuchi, Yahachi Saito, Susumu Saito, Mototada Kobayashi
PublisherAmerican Institute of Physics Inc.
Pages133-136
Number of pages4
ISBN (Electronic)0735400326, 9780735400320
DOIs
Publication statusPublished - 2001 Oct 16
EventInternational Symposium on Nanonetwork Materials: Fullerenes, Nanotubes, and Related Systems 2001 - Kamakura, Japan
Duration: 2001 Jan 152001 Jan 18

Publication series

NameAIP Conference Proceedings
Volume590
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherInternational Symposium on Nanonetwork Materials: Fullerenes, Nanotubes, and Related Systems 2001
CountryJapan
CityKamakura
Period01/1/1501/1/18

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'High energy-resolution EELS study of the electronic structure of boron nitride cones'. Together they form a unique fingerprint.

Cite this