High energy-resolution EELS study of the electronic structure of boron nitride cones

M. Terauchi, M. Kawana, M. Tanaka, K. Suzuki, A. Ogino, K. Kimura

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    Electron energy-loss spectra were obtained from a single boron-nitride cone (BN cone) with an apex angle of 20 degrees, which is made of curved BN layers. The spectra obtained from the tip region showed the π plasmon peak at 7.4 eV, which is smaller than that of bulk hexagonal boron-nitride (h-BN) composed of flat BN layers. The smaller π plasmon energy indicates that the bandgap energy of the BN cone is smaller than that of h-BN. The intensity distribution of the π+σ plasmon peak is explained by the surface loss-function. The B K-shell electron excitation spectra were obtained from the bottom edge region. The spectra showed additional peak intensity compared with that of bulk h-BN.

    Original languageEnglish
    Title of host publicationNanonetwork Materials
    Subtitle of host publicationFullerenes, Nanotubes, and Related Systems
    EditorsTsuneya Ando, Yoshihiro Iwasawa, Koichi Kikuchi, Yahachi Saito, Susumu Saito, Mototada Kobayashi
    PublisherAmerican Institute of Physics Inc.
    Pages133-136
    Number of pages4
    ISBN (Electronic)0735400326, 9780735400320
    DOIs
    Publication statusPublished - 2001 Oct 16
    EventInternational Symposium on Nanonetwork Materials: Fullerenes, Nanotubes, and Related Systems 2001 - Kamakura, Japan
    Duration: 2001 Jan 152001 Jan 18

    Publication series

    NameAIP Conference Proceedings
    Volume590
    ISSN (Print)0094-243X
    ISSN (Electronic)1551-7616

    Other

    OtherInternational Symposium on Nanonetwork Materials: Fullerenes, Nanotubes, and Related Systems 2001
    Country/TerritoryJapan
    CityKamakura
    Period01/1/1501/1/18

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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