High-energy photoemission spectroscopy of ferromagnetic Ga 1-xMnxN

J. J. Kim; H. Makino; P. P. Chen; T. Hanada; T. Yao; K. Kobayashi; M. Yabashi; Y. Takata; T. Tokushima; D. Miwa; K. Tamasaku; T. Ishikawa; S. Shin; T. Yamamoto

doi:10.1016/j.mssp.2003.07.023

High-energy photoemission spectroscopy of ferromagnetic Ga _1-xMn_xN

J. J. Kim, H. Makino, P. P. Chen, T. Hanada, T. Yao, K. Kobayashi, M. Yabashi, Y. Takata, T. Tokushima, D. Miwa, K. Tamasaku, T. Ishikawa, S. Shin, T. Yamamoto

Materials Design Division

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Here we report investigation of valence band electronic states of ferromagnetic Ga_0.96Mn_0.04N by bulk-sensitive X-ray photoemission, which is realized at high flux X-ray undulator beamline BL29XU of SPring-8, at photon energy of 5.95keV. We have observed that Mn doping introduces a new structure in the band gap region near the top of the valence band, and also a broader structure in deeper valence band region. Basing upon the first principle calculation, these structures are assigned as Ga 4s originated states, which are raised by hybridization between 3d orbitals of Mn with GaN host orbitals. The present result evidences the second nearest Ga bonds are affected by that Mn-N bond formation, suggesting the long-range interaction of Mn in this host material.

Original language	English
Pages (from-to)	503-506
Number of pages	4
Journal	Materials Science in Semiconductor Processing
Volume	6
Issue number	5-6
DOIs	https://doi.org/10.1016/j.mssp.2003.07.023
Publication status	Published - 2003 Oct

Keywords

Ferromagnetism
GaMnN
High-energy photoemission spectroscopy

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.mssp.2003.07.023

Fingerprint Dive into the research topics of 'High-energy photoemission spectroscopy of ferromagnetic Ga <sub>1-x</sub>Mn<sub>x</sub>N'. Together they form a unique fingerprint.

Cite this

High-energy photoemission spectroscopy of ferromagnetic Ga _1-xMn_xN. / Kim, J. J.; Makino, H.; Chen, P. P.; Hanada, T.; Yao, T.; Kobayashi, K.; Yabashi, M.; Takata, Y.; Tokushima, T.; Miwa, D.; Tamasaku, K.; Ishikawa, T.; Shin, S.; Yamamoto, T.

In: Materials Science in Semiconductor Processing, Vol. 6, No. 5-6, 10.2003, p. 503-506.

Research output: Contribution to journal › Article › peer-review

@article{547ed78c84fd42759658c2d99786c2dd,

title = "High-energy photoemission spectroscopy of ferromagnetic Ga 1-xMnxN",

abstract = "Here we report investigation of valence band electronic states of ferromagnetic Ga0.96Mn0.04N by bulk-sensitive X-ray photoemission, which is realized at high flux X-ray undulator beamline BL29XU of SPring-8, at photon energy of 5.95keV. We have observed that Mn doping introduces a new structure in the band gap region near the top of the valence band, and also a broader structure in deeper valence band region. Basing upon the first principle calculation, these structures are assigned as Ga 4s originated states, which are raised by hybridization between 3d orbitals of Mn with GaN host orbitals. The present result evidences the second nearest Ga bonds are affected by that Mn-N bond formation, suggesting the long-range interaction of Mn in this host material.",

keywords = "Ferromagnetism, GaMnN, High-energy photoemission spectroscopy",

author = "Kim, {J. J.} and H. Makino and Chen, {P. P.} and T. Hanada and T. Yao and K. Kobayashi and M. Yabashi and Y. Takata and T. Tokushima and D. Miwa and K. Tamasaku and T. Ishikawa and S. Shin and T. Yamamoto",

year = "2003",

month = oct,

doi = "10.1016/j.mssp.2003.07.023",

language = "English",

volume = "6",

pages = "503--506",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Limited",

number = "5-6",

}

TY - JOUR

T1 - High-energy photoemission spectroscopy of ferromagnetic Ga 1-xMnxN

AU - Kim, J. J.

AU - Makino, H.

AU - Chen, P. P.

AU - Hanada, T.

AU - Yao, T.

AU - Kobayashi, K.

AU - Yabashi, M.

AU - Takata, Y.

AU - Tokushima, T.

AU - Miwa, D.

AU - Tamasaku, K.

AU - Ishikawa, T.

AU - Shin, S.

AU - Yamamoto, T.

PY - 2003/10

Y1 - 2003/10

N2 - Here we report investigation of valence band electronic states of ferromagnetic Ga0.96Mn0.04N by bulk-sensitive X-ray photoemission, which is realized at high flux X-ray undulator beamline BL29XU of SPring-8, at photon energy of 5.95keV. We have observed that Mn doping introduces a new structure in the band gap region near the top of the valence band, and also a broader structure in deeper valence band region. Basing upon the first principle calculation, these structures are assigned as Ga 4s originated states, which are raised by hybridization between 3d orbitals of Mn with GaN host orbitals. The present result evidences the second nearest Ga bonds are affected by that Mn-N bond formation, suggesting the long-range interaction of Mn in this host material.

AB - Here we report investigation of valence band electronic states of ferromagnetic Ga0.96Mn0.04N by bulk-sensitive X-ray photoemission, which is realized at high flux X-ray undulator beamline BL29XU of SPring-8, at photon energy of 5.95keV. We have observed that Mn doping introduces a new structure in the band gap region near the top of the valence band, and also a broader structure in deeper valence band region. Basing upon the first principle calculation, these structures are assigned as Ga 4s originated states, which are raised by hybridization between 3d orbitals of Mn with GaN host orbitals. The present result evidences the second nearest Ga bonds are affected by that Mn-N bond formation, suggesting the long-range interaction of Mn in this host material.

KW - Ferromagnetism

KW - GaMnN

KW - High-energy photoemission spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=12144291503&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=12144291503&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2003.07.023

DO - 10.1016/j.mssp.2003.07.023

M3 - Article

AN - SCOPUS:12144291503

VL - 6

SP - 503

EP - 506

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

IS - 5-6

ER -