We report high electronic-optical conversion efficiency of 11.4% in a vertical to surface transmission electro-photonic device with a vertical cavity. Reduction in the electrical resistance by the double mesa structure, efficient confinement of carriers in the active region by the proton implanted structure, and photon recycling by sidewall reflectors lead to this high conversion efficiency. The electronic-optical conversion efficiency over 10% is achieved for the first time in surface emitting devices.
|Number of pages||3|
|Publication status||Published - 1992|
|Event||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn|
Duration: 1992 Aug 26 → 1992 Aug 28
|Other||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92|
|Period||92/8/26 → 92/8/28|
ASJC Scopus subject areas