Metal-insulator-semiconductor field-effect transistors (MISFETs) were fabricated on the (111)A surface of In0.53Ga0.47As for the first time. Al2O3 gate dielectrics were formed by atomic layer deposition on sulfur-stabilized InGaAs surfaces. The MISFET on (111)A demonstrated channel mobility higher than that on (100), achieving more than 100% improvement with respect to Si even at a high surface carrier concentration.
ASJC Scopus subject areas
- Physics and Astronomy(all)