High electron mobility metal-insulator-semiconductor field-effect transistors fabricated on (111)-oriented InGaAs channels

Hiroyuki Ishii, Noriyuki Miyata, Yuji Urabe, Taro Itatani, Tetsuji Yasuda, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Momoko Deura, Masakazu Sugiyama, Mitsuru Takenaka, Shinichi Takagi

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47 Citations (Scopus)

Abstract

Metal-insulator-semiconductor field-effect transistors (MISFETs) were fabricated on the (111)A surface of In0.53Ga0.47As for the first time. Al2O3 gate dielectrics were formed by atomic layer deposition on sulfur-stabilized InGaAs surfaces. The MISFET on (111)A demonstrated channel mobility higher than that on (100), achieving more than 100% improvement with respect to Si even at a high surface carrier concentration.

Original languageEnglish
Article number121101
JournalApplied Physics Express
Volume2
Issue number12
DOIs
Publication statusPublished - 2009 Dec 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Ishii, H., Miyata, N., Urabe, Y., Itatani, T., Yasuda, T., Yamada, H., Fukuhara, N., Hata, M., Deura, M., Sugiyama, M., Takenaka, M., & Takagi, S. (2009). High electron mobility metal-insulator-semiconductor field-effect transistors fabricated on (111)-oriented InGaAs channels. Applied Physics Express, 2(12), [121101]. https://doi.org/10.1143/APEX.2.121101