High electron mobility in algaas/gaas modulation-doped structures

Tadashi Saku, Yoshiro Hirayama, Yoshiji Horikoshi

Research output: Contribution to journalArticlepeer-review

37 Citations (Scopus)

Abstract

AlGaAs/GaAs modulation-doped structures with low-temperature electron mobility exceeding 107 cm2/Vs at a carrier concentration of 2.5 - 3 x 1011 cm-2 are grown by molecular beam epitaxy. Electron mobility above 8 x 106 cm2/Vs is reproducibly obtained over more than 6 months by careful baking of the growth system and optimization of the layer structure. Voltage-current measurements showing nonlinear and negative resistance characteristics at low temperatures indicate that the ballistic motion of electrons dominates the transport characteristics of these samples.

Original languageEnglish
Pages (from-to)9092-9905
Number of pages814
JournalJapanese journal of applied physics
Volume30
Issue number5 R
DOIs
Publication statusPublished - 1991 May
Externally publishedYes

Keywords

  • Ballistic transport
  • Electron mobility
  • MBE
  • Modulation-doped structure

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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