High electrical conduction of the Sb square net in an anti-ThCr2Si2type La2O2Sb thin film grown by multilayer solid-phase epitaxy

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Anti-ThCr2Si2typeRE2O2Sb (RE= rare earth) with a Sb square net has shown insulating conduction so far. Here we report the synthesis of La2O2Sb epitaxial thin films for the first time by multilayer solid-phase epitaxy. The valence state of Sb was about −2 evaluated from X-ray photoemission spectroscopy measurement, and the indirect band gap of 0.17 eV was observed. The La2O2Sb epitaxial thin film showed unexpectedly high electrical conduction as a narrow gap semiconductor, whose resistivity at room temperature was approximately ten-thousand-fold lower than that of La2O2Sb bulk polycrystal, attributed to increased carrier mobility probably due to suppressed Sb dimerization.

Original languageEnglish
Pages (from-to)6880-6884
Number of pages5
JournalJournal of Materials Chemistry C
Issue number21
Publication statusPublished - 2021 Jun 7

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry


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