High efficient spin transfer torque writing on perpendicular magnetic tunnel junctions for high density MRAMs

Hiroaki Yoda, Tatsuya Kishi, Toshihiko Nagase, Masatoshi Yoshikawa, Katsuya Nishiyama, Eiji Kitagawa, Tadaomi Daibou, Minoru Amano, Naoharu Shimomura, Shigeki Takahashi, Tadashi Kai, Masahiko Nakayama, Hisanori Aikawa, Sumio Ikegawa, Makoto Nagamine, Junichi Ozeki, Shigemi Mizukami, Mikihiko Oogane, Yasuo Ando, Shinji YuasaKei Yakushiji, Hitoshi Kubota, Yoshishige Suzuki, Yoshinobu Nakatani, Terunobu Miyazaki, Koji Ando

Research output: Contribution to journalArticlepeer-review

144 Citations (Scopus)

Abstract

An Fe-based perpendicular alloy with small damping constant was applied to an MTJ storage layer and small switching current of 9 μA was obtained for a write current width of 5 ms. The efficiency of spin transfer torque writing was proved to be higher than those for in-plane MTJs. The estimated Ic for the MTJ with 50 nsec pulse width is lower than 20 μA and smaller than the drive currents of CMOS transistor at Gbits density.

Original languageEnglish
Pages (from-to)e87-e89
JournalCurrent Applied Physics
Volume10
Issue number1 SUPPL. 1
DOIs
Publication statusPublished - 2010 Jan

Keywords

  • Critical switching currents
  • Damping constant
  • Fe alloy
  • Gbits density
  • MRAM
  • MTJ
  • Perpendicular
  • Spin transfer torque

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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