High-efficiency power characteristics for WCDMA applications of SiGe HBT devices using a novel form of base-bias resistance

M. Kondo, I. Miyashita, M. Koshimizu, Y. Kagotoshi, H. Nagai, K. Washio

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)

Abstract

We present SiGe heterojunction bipolar transistor (HBT) devices that exhibit highly efficient and linear power characteristics comparable to those of GaAs HBTs under wide-band code-division multiple-access (WCDMA) modulation for the first time. Two resistors in series are inserted in the base-bias current path of the device. One only conducts envelope-frequency components of the base current while the other also conducts DC. By adjusting the resistance values, the adjacent channel power ratio (ACPR) was significantly reduced over a wide range of output power levels without loss of efficiency. An optimized device with a total emitter area 3390 μm2 exhibited 44% power-added-effidency (PAE) and 27.3-dBm output power with ACPR of less than -40 dBc under WCDMA modulation at 1.95 GHz and 3.4-V bias voltage.

Original languageEnglish
Pages (from-to)2205-2208
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume3
Publication statusPublished - 2003
Event2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States
Duration: 2003 Jun 82003 Jun 13

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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