High-efficiency power characteristics for WCDMA applications of SiGe HBT devices using a novel form of base-bias resistance

M. Kondo; I. Miyashita; M. Koshimizu; Y. Kagotoshi; H. Nagai; K. Washio

High-efficiency power characteristics for WCDMA applications of SiGe HBT devices using a novel form of base-bias resistance

M. Kondo, I. Miyashita, M. Koshimizu, Y. Kagotoshi, H. Nagai, K. Washio

Research output: Contribution to journal › Conference article › peer-review

Abstract

We present SiGe heterojunction bipolar transistor (HBT) devices that exhibit highly efficient and linear power characteristics comparable to those of GaAs HBTs under wide-band code-division multiple-access (WCDMA) modulation for the first time. Two resistors in series are inserted in the base-bias current path of the device. One only conducts envelope-frequency components of the base current while the other also conducts DC. By adjusting the resistance values, the adjacent channel power ratio (ACPR) was significantly reduced over a wide range of output power levels without loss of efficiency. An optimized device with a total emitter area 3390 μm² exhibited 44% power-added-effidency (PAE) and 27.3-dBm output power with ACPR of less than -40 dBc under WCDMA modulation at 1.95 GHz and 3.4-V bias voltage.

Original language	English
Pages (from-to)	2205-2208
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	3
Publication status	Published - 2003
Externally published	Yes
Event	2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States Duration: 2003 Jun 8 → 2003 Jun 13

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

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title = "High-efficiency power characteristics for WCDMA applications of SiGe HBT devices using a novel form of base-bias resistance",

abstract = "We present SiGe heterojunction bipolar transistor (HBT) devices that exhibit highly efficient and linear power characteristics comparable to those of GaAs HBTs under wide-band code-division multiple-access (WCDMA) modulation for the first time. Two resistors in series are inserted in the base-bias current path of the device. One only conducts envelope-frequency components of the base current while the other also conducts DC. By adjusting the resistance values, the adjacent channel power ratio (ACPR) was significantly reduced over a wide range of output power levels without loss of efficiency. An optimized device with a total emitter area 3390 μm2 exhibited 44% power-added-effidency (PAE) and 27.3-dBm output power with ACPR of less than -40 dBc under WCDMA modulation at 1.95 GHz and 3.4-V bias voltage.",

author = "M. Kondo and I. Miyashita and M. Koshimizu and Y. Kagotoshi and H. Nagai and K. Washio",

year = "2003",

language = "English",

volume = "3",

pages = "2205--2208",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - High-efficiency power characteristics for WCDMA applications of SiGe HBT devices using a novel form of base-bias resistance

AU - Kondo, M.

AU - Miyashita, I.

AU - Koshimizu, M.

AU - Kagotoshi, Y.

AU - Nagai, H.

AU - Washio, K.

PY - 2003

Y1 - 2003

N2 - We present SiGe heterojunction bipolar transistor (HBT) devices that exhibit highly efficient and linear power characteristics comparable to those of GaAs HBTs under wide-band code-division multiple-access (WCDMA) modulation for the first time. Two resistors in series are inserted in the base-bias current path of the device. One only conducts envelope-frequency components of the base current while the other also conducts DC. By adjusting the resistance values, the adjacent channel power ratio (ACPR) was significantly reduced over a wide range of output power levels without loss of efficiency. An optimized device with a total emitter area 3390 μm2 exhibited 44% power-added-effidency (PAE) and 27.3-dBm output power with ACPR of less than -40 dBc under WCDMA modulation at 1.95 GHz and 3.4-V bias voltage.

AB - We present SiGe heterojunction bipolar transistor (HBT) devices that exhibit highly efficient and linear power characteristics comparable to those of GaAs HBTs under wide-band code-division multiple-access (WCDMA) modulation for the first time. Two resistors in series are inserted in the base-bias current path of the device. One only conducts envelope-frequency components of the base current while the other also conducts DC. By adjusting the resistance values, the adjacent channel power ratio (ACPR) was significantly reduced over a wide range of output power levels without loss of efficiency. An optimized device with a total emitter area 3390 μm2 exhibited 44% power-added-effidency (PAE) and 27.3-dBm output power with ACPR of less than -40 dBc under WCDMA modulation at 1.95 GHz and 3.4-V bias voltage.

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M3 - Conference article

AN - SCOPUS:0041589520

VL - 3

SP - 2205

EP - 2208

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

SN - 0149-645X

T2 - 2003 IEEE MTT-S International Microwave Symposium Digest

Y2 - 8 June 2003 through 13 June 2003

ER -

High-efficiency power characteristics for WCDMA applications of SiGe HBT devices using a novel form of base-bias resistance

Abstract

ASJC Scopus subject areas

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