Abstract
We present SiGe heterojunction bipolar transistor (HBT) devices that exhibit highly efficient and linear power characteristics comparable to those of GaAs HBTs under wide-band code-division multiple-access (WCDMA) modulation for the first time. Two resistors in series are inserted in the base-bias current path of the device. One only conducts envelope-frequency components of the base current while the other also conducts DC. By adjusting the resistance values, the adjacent channel power ratio (ACPR) was significantly reduced over a wide range of output power levels without loss of efficiency. An optimized device with a total emitter area 3390 μm2 exhibited 44% power-added-effidency (PAE) and 27.3-dBm output power with ACPR of less than -40 dBc under WCDMA modulation at 1.95 GHz and 3.4-V bias voltage.
Original language | English |
---|---|
Pages (from-to) | 2205-2208 |
Number of pages | 4 |
Journal | IEEE MTT-S International Microwave Symposium Digest |
Volume | 3 |
Publication status | Published - 2003 |
Event | 2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States Duration: 2003 Jun 8 → 2003 Jun 13 |
ASJC Scopus subject areas
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering