High-efficiency light-emitting column-crystallized InGaN/GaN quantum-well flower structure on micropillared Si substrate

F. R. Hu, K. Ochi, Y. Zhao, Kazuhiro Hane

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

Column-crystallized InGaNGaN quantum-well flower structure was deposited on pillared Si (111) substrate. Dotted GaN nuclei grew along the direction of the coming Ga and N atoms, forming arrays of InGaNGaN quantum-well flower structure. Raman spectra measurement demonstrated that these crystals were fully relaxed. Photoluminescence measurement showed a room temperature peak position of 556 nm and two peak positions of 400 and 549 nm at low temperature. Hg lamp excited photoluminescence demonstrated a clear fluorescence distribution from the low to the top part of the flower structure and much stronger emission compared with the quantum-well crystals on the flat Si substrate.

Original languageEnglish
Article number171903
JournalApplied Physics Letters
Volume89
Issue number17
DOIs
Publication statusPublished - 2006 Nov 6

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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