Abstract
Column-crystallized InGaNGaN quantum-well flower structure was deposited on pillared Si (111) substrate. Dotted GaN nuclei grew along the direction of the coming Ga and N atoms, forming arrays of InGaNGaN quantum-well flower structure. Raman spectra measurement demonstrated that these crystals were fully relaxed. Photoluminescence measurement showed a room temperature peak position of 556 nm and two peak positions of 400 and 549 nm at low temperature. Hg lamp excited photoluminescence demonstrated a clear fluorescence distribution from the low to the top part of the flower structure and much stronger emission compared with the quantum-well crystals on the flat Si substrate.
Original language | English |
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Article number | 171903 |
Journal | Applied Physics Letters |
Volume | 89 |
Issue number | 17 |
DOIs | |
Publication status | Published - 2006 Nov 6 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)