High-efficiency light-emitting column-crystallized InGaN/GaN quantum-well flower structure on micropillared Si substrate

F. R. Hu; K. Ochi; Y. Zhao; Kazuhiro Hane

doi:10.1063/1.2364839

High-efficiency light-emitting column-crystallized InGaN/GaN quantum-well flower structure on micropillared Si substrate

F. R. Hu, K. Ochi, Y. Zhao, Kazuhiro Hane

ENG - Finemechanics

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Column-crystallized InGaNGaN quantum-well flower structure was deposited on pillared Si (111) substrate. Dotted GaN nuclei grew along the direction of the coming Ga and N atoms, forming arrays of InGaNGaN quantum-well flower structure. Raman spectra measurement demonstrated that these crystals were fully relaxed. Photoluminescence measurement showed a room temperature peak position of 556 nm and two peak positions of 400 and 549 nm at low temperature. Hg lamp excited photoluminescence demonstrated a clear fluorescence distribution from the low to the top part of the flower structure and much stronger emission compared with the quantum-well crystals on the flat Si substrate.

Original language	English
Article number	171903
Journal	Applied Physics Letters
Volume	89
Issue number	17
DOIs	https://doi.org/10.1063/1.2364839
Publication status	Published - 2006 Nov 6

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "High-efficiency light-emitting column-crystallized InGaN/GaN quantum-well flower structure on micropillared Si substrate",

abstract = "Column-crystallized InGaNGaN quantum-well flower structure was deposited on pillared Si (111) substrate. Dotted GaN nuclei grew along the direction of the coming Ga and N atoms, forming arrays of InGaNGaN quantum-well flower structure. Raman spectra measurement demonstrated that these crystals were fully relaxed. Photoluminescence measurement showed a room temperature peak position of 556 nm and two peak positions of 400 and 549 nm at low temperature. Hg lamp excited photoluminescence demonstrated a clear fluorescence distribution from the low to the top part of the flower structure and much stronger emission compared with the quantum-well crystals on the flat Si substrate.",

author = "Hu, {F. R.} and K. Ochi and Y. Zhao and Kazuhiro Hane",

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T1 - High-efficiency light-emitting column-crystallized InGaN/GaN quantum-well flower structure on micropillared Si substrate

AU - Hu, F. R.

AU - Ochi, K.

AU - Zhao, Y.

AU - Hane, Kazuhiro

PY - 2006/11/6

Y1 - 2006/11/6

N2 - Column-crystallized InGaNGaN quantum-well flower structure was deposited on pillared Si (111) substrate. Dotted GaN nuclei grew along the direction of the coming Ga and N atoms, forming arrays of InGaNGaN quantum-well flower structure. Raman spectra measurement demonstrated that these crystals were fully relaxed. Photoluminescence measurement showed a room temperature peak position of 556 nm and two peak positions of 400 and 549 nm at low temperature. Hg lamp excited photoluminescence demonstrated a clear fluorescence distribution from the low to the top part of the flower structure and much stronger emission compared with the quantum-well crystals on the flat Si substrate.

AB - Column-crystallized InGaNGaN quantum-well flower structure was deposited on pillared Si (111) substrate. Dotted GaN nuclei grew along the direction of the coming Ga and N atoms, forming arrays of InGaNGaN quantum-well flower structure. Raman spectra measurement demonstrated that these crystals were fully relaxed. Photoluminescence measurement showed a room temperature peak position of 556 nm and two peak positions of 400 and 549 nm at low temperature. Hg lamp excited photoluminescence demonstrated a clear fluorescence distribution from the low to the top part of the flower structure and much stronger emission compared with the quantum-well crystals on the flat Si substrate.

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