High efficiency-carrier-generation for the oxygen release reaction in indium tin oxide

Takahisa Omata; Hiroyuki Fujiwara; Shinya Otsuka-Yao-Matsuo; Naoki Ono; Hiroyuki Ikawa

doi:10.1143/jjap.37.l879

High efficiency-carrier-generation for the oxygen release reaction in indium tin oxide

Takahisa Omata, Hiroyuki Fujiwara, Shinya Otsuka-Yao-Matsuo, Naoki Ono, Hiroyuki Ikawa

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Indium tin oxide (ITO) sinters were heated up to 1073 and 1273 K under the condition that P(O₂)/P* = 4.9 × 10^-4 (P*: atmospheric pressure), when P(O₂) was approximately 50Pa, in a closed-system oxygen-gas analyzer, and the number of oxygen atoms released from ITO was quantitatively determined. The conduction electron densities were determined by Hall measurements at room temperature. It was shown that the release of one oxygen atom corresponded to the generation of two conduction electrons, i.e., the efficiency-carrier-generation for the oxygen release from the ITO was almost one. Based on the crystal structure of the ITO, the oxygen atom released was originally at the 16c site in the space group of Ia3 as an interstitial excess oxygen, O_i″.

Original language	English
Pages (from-to)	L879-L881
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	37
Issue number	7 SUPPL. B
DOIs	https://doi.org/10.1143/jjap.37.l879
Publication status	Published - 1998 Jul 15
Externally published	Yes

Keywords

Conduction electron density
Efficiency-carrier-generation
Electrical conductivity
Indium tin oxide
Oxygen release

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.37.l879

Fingerprint Dive into the research topics of 'High efficiency-carrier-generation for the oxygen release reaction in indium tin oxide'. Together they form a unique fingerprint.

Cite this

@article{7a85c7d21e25417b8ac968d73375ffbe,

title = "High efficiency-carrier-generation for the oxygen release reaction in indium tin oxide",

abstract = "Indium tin oxide (ITO) sinters were heated up to 1073 and 1273 K under the condition that P(O2)/P* = 4.9 × 10-4 (P*: atmospheric pressure), when P(O2) was approximately 50Pa, in a closed-system oxygen-gas analyzer, and the number of oxygen atoms released from ITO was quantitatively determined. The conduction electron densities were determined by Hall measurements at room temperature. It was shown that the release of one oxygen atom corresponded to the generation of two conduction electrons, i.e., the efficiency-carrier-generation for the oxygen release from the ITO was almost one. Based on the crystal structure of the ITO, the oxygen atom released was originally at the 16c site in the space group of Ia3 as an interstitial excess oxygen, Oi″.",

keywords = "Conduction electron density, Efficiency-carrier-generation, Electrical conductivity, Indium tin oxide, Oxygen release",

author = "Takahisa Omata and Hiroyuki Fujiwara and Shinya Otsuka-Yao-Matsuo and Naoki Ono and Hiroyuki Ikawa",

year = "1998",

month = jul,

day = "15",

doi = "10.1143/jjap.37.l879",

language = "English",

volume = "37",

pages = "L879--L881",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "7 SUPPL. B",

}

TY - JOUR

T1 - High efficiency-carrier-generation for the oxygen release reaction in indium tin oxide

AU - Omata, Takahisa

AU - Fujiwara, Hiroyuki

AU - Otsuka-Yao-Matsuo, Shinya

AU - Ono, Naoki

AU - Ikawa, Hiroyuki

PY - 1998/7/15

Y1 - 1998/7/15

N2 - Indium tin oxide (ITO) sinters were heated up to 1073 and 1273 K under the condition that P(O2)/P* = 4.9 × 10-4 (P*: atmospheric pressure), when P(O2) was approximately 50Pa, in a closed-system oxygen-gas analyzer, and the number of oxygen atoms released from ITO was quantitatively determined. The conduction electron densities were determined by Hall measurements at room temperature. It was shown that the release of one oxygen atom corresponded to the generation of two conduction electrons, i.e., the efficiency-carrier-generation for the oxygen release from the ITO was almost one. Based on the crystal structure of the ITO, the oxygen atom released was originally at the 16c site in the space group of Ia3 as an interstitial excess oxygen, Oi″.

AB - Indium tin oxide (ITO) sinters were heated up to 1073 and 1273 K under the condition that P(O2)/P* = 4.9 × 10-4 (P*: atmospheric pressure), when P(O2) was approximately 50Pa, in a closed-system oxygen-gas analyzer, and the number of oxygen atoms released from ITO was quantitatively determined. The conduction electron densities were determined by Hall measurements at room temperature. It was shown that the release of one oxygen atom corresponded to the generation of two conduction electrons, i.e., the efficiency-carrier-generation for the oxygen release from the ITO was almost one. Based on the crystal structure of the ITO, the oxygen atom released was originally at the 16c site in the space group of Ia3 as an interstitial excess oxygen, Oi″.

KW - Conduction electron density

KW - Efficiency-carrier-generation

KW - Electrical conductivity

KW - Indium tin oxide

KW - Oxygen release

UR - http://www.scopus.com/inward/record.url?scp=0032115696&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032115696&partnerID=8YFLogxK

U2 - 10.1143/jjap.37.l879

DO - 10.1143/jjap.37.l879

M3 - Article

AN - SCOPUS:0032115696

VL - 37

SP - L879-L881

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 7 SUPPL. B

ER -