High Efficiency 1.3μm Superluminescent Diode with Absorbing Tapered Waveguide

K. Magari; Y. Hoguchi; K. Okamoto; H. Yasaka; H. Nagai; O. Mikami

doi:10.1049/el:19900927

High Efficiency 1.3μm Superluminescent Diode with Absorbing Tapered Waveguide

K. Magari, Y. Hoguchi, K. Okamoto, H. Yasaka, H. Nagai, O. Mikami

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A new type of superluminescent diode (SLD) with a tapered waveguide in the absorbing region is proposed. This SLD structure quite suitably monitors output power, as it emits monitor light from the rear facet that is about one-tenth the output power from the front one. Device parameters have been determined by beam propagation methods. A 1.3μm SLD fabricated by liquid phase epitaxy (LPE) with an absorbing waveguide 200μm long and with a 6.5° tapered angle can emit output power of 13.5 mW from the front facet at a 200 mA driving current without lasing.

Original language	English
Pages (from-to)	1445-1446
Number of pages	2
Journal	Electronics Letters
Volume	26
Issue number	18
DOIs	https://doi.org/10.1049/el:19900927
Publication status	Published - 1990 Jan
Externally published	Yes

Keywords

Luminescent devices
Semiconductor devices and materials
Waveguides

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19900927

Cite this

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title = "High Efficiency 1.3μm Superluminescent Diode with Absorbing Tapered Waveguide",

abstract = "A new type of superluminescent diode (SLD) with a tapered waveguide in the absorbing region is proposed. This SLD structure quite suitably monitors output power, as it emits monitor light from the rear facet that is about one-tenth the output power from the front one. Device parameters have been determined by beam propagation methods. A 1.3μm SLD fabricated by liquid phase epitaxy (LPE) with an absorbing waveguide 200μm long and with a 6.5° tapered angle can emit output power of 13.5 mW from the front facet at a 200 mA driving current without lasing.",

keywords = "Luminescent devices, Semiconductor devices and materials, Waveguides",

author = "K. Magari and Y. Hoguchi and K. Okamoto and H. Yasaka and H. Nagai and O. Mikami",

year = "1990",

month = jan,

doi = "10.1049/el:19900927",

language = "English",

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pages = "1445--1446",

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T1 - High Efficiency 1.3μm Superluminescent Diode with Absorbing Tapered Waveguide

AU - Magari, K.

AU - Hoguchi, Y.

AU - Okamoto, K.

AU - Yasaka, H.

AU - Nagai, H.

AU - Mikami, O.

PY - 1990/1

Y1 - 1990/1

N2 - A new type of superluminescent diode (SLD) with a tapered waveguide in the absorbing region is proposed. This SLD structure quite suitably monitors output power, as it emits monitor light from the rear facet that is about one-tenth the output power from the front one. Device parameters have been determined by beam propagation methods. A 1.3μm SLD fabricated by liquid phase epitaxy (LPE) with an absorbing waveguide 200μm long and with a 6.5° tapered angle can emit output power of 13.5 mW from the front facet at a 200 mA driving current without lasing.

AB - A new type of superluminescent diode (SLD) with a tapered waveguide in the absorbing region is proposed. This SLD structure quite suitably monitors output power, as it emits monitor light from the rear facet that is about one-tenth the output power from the front one. Device parameters have been determined by beam propagation methods. A 1.3μm SLD fabricated by liquid phase epitaxy (LPE) with an absorbing waveguide 200μm long and with a 6.5° tapered angle can emit output power of 13.5 mW from the front facet at a 200 mA driving current without lasing.

KW - Luminescent devices

KW - Semiconductor devices and materials

KW - Waveguides

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DO - 10.1049/el:19900927

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JO - Electronics Letters

JF - Electronics Letters

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ER -

High Efficiency 1.3μm Superluminescent Diode with Absorbing Tapered Waveguide

Abstract

Keywords

ASJC Scopus subject areas

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