High-density two-dimensional electron system induced by oxygen vacancies in ZnO

T. C. Rödel, J. Dai, F. Fortuna, E. Frantzeskakis, P. Le Fèvre, F. Bertran, M. Kobayashi, R. Yukawa, T. Mitsuhashi, M. Kitamura, K. Horiba, H. Kumigashira, A. F. Santander-Syro

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

We realize a two-dimensional electron system (2DES) in ZnO by simply depositing pure aluminum on its surface in ultrahigh vacuum and characterize its electronic structure by using angle-resolved photoemission spectroscopy. The aluminum oxidizes into alumina by creating oxygen vacancies that dope the bulk conduction band of ZnO and confine the electrons near its surface. The electron density of the 2DES is up to two orders of magnitude higher than those obtained in ZnO heterostructures. The 2DES shows two s-type subbands, that we compare with the d-like 2DESs in titanates, with clear signatures of many-body interactions that we analyze through a self-consistent extraction of the system self-energy and a modeling as a coupling of a two-dimensional Fermi liquid with a Debye distribution of phonons.

Original languageEnglish
Article number051601
JournalPhysical Review Materials
Volume2
Issue number5
DOIs
Publication statusPublished - 2018 May 14
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

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