High-density and sub-20-nm GaAs nanodisk array fabricated using neutral beam etching process for high performance QDs devices

Yosuke Tamura; Makoto Igarashi; Mohd Erman Fauzi; Rikako Tsukamoto; Toshiyuki Kaizu; Takayuki Kiba; Ichiro Yamashita; Yoshitaka Okada; Akihiro Murayama; Seiji Samukawa

doi:10.1109/NANO.2012.6321974

High-density and sub-20-nm GaAs nanodisk array fabricated using neutral beam etching process for high performance QDs devices

Yosuke Tamura, Makoto Igarashi, Mohd Erman Fauzi, Rikako Tsukamoto, Toshiyuki Kaizu, Takayuki Kiba, Ichiro Yamashita, Yoshitaka Okada, Akihiro Murayama, Seiji Samukawa

Innovative Energy Research Center

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

III-V compound quantum dots are extremely attractive in researching the quantum effect and developing future quantum photovoltaic devices. We developed a defect-free fabrication process for sub-20-nm gallium arsenide (GaAs) nanodisk using bio-template and neutral beam etching. We successfully fabricated defect-free and high-aspect ratio GaAs/aluminium gallium arsenide (AlGaAs) stack-layered sub-20-nm nanodisk structures. The diameter of the GaAs nanodisk could be precisely controlled from 12 to 18 nm by a combination of Hydrogen-radical treatment and neutral beam etching. We then detected a strong photoluminescence peak originating from the GaAs nanodisk for the first time even when using top-down processes. We found that our fabricated nanodisk array structures have great potential for high performance III-V compound optical quantum dots devices.

Original language	English
Title of host publication	2012 12th IEEE International Conference on Nanotechnology, NANO 2012
DOIs	https://doi.org/10.1109/NANO.2012.6321974
Publication status	Published - 2012
Event	2012 12th IEEE International Conference on Nanotechnology, NANO 2012 - Birmingham, United Kingdom Duration: 2012 Aug 20 → 2012 Aug 23

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Other

Other	2012 12th IEEE International Conference on Nanotechnology, NANO 2012
Country/Territory	United Kingdom
City	Birmingham
Period	12/8/20 → 12/8/23

ASJC Scopus subject areas

Bioengineering
Electrical and Electronic Engineering
Materials Chemistry
Condensed Matter Physics

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/NANO.2012.6321974

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Tamura, Y., Igarashi, M., Fauzi, M. E., Tsukamoto, R., Kaizu, T., Kiba, T., Yamashita, I., Okada, Y., Murayama, A., & Samukawa, S. (2012). High-density and sub-20-nm GaAs nanodisk array fabricated using neutral beam etching process for high performance QDs devices. In 2012 12th IEEE International Conference on Nanotechnology, NANO 2012 [6321974] (Proceedings of the IEEE Conference on Nanotechnology). https://doi.org/10.1109/NANO.2012.6321974

High-density and sub-20-nm GaAs nanodisk array fabricated using neutral beam etching process for high performance QDs devices. / Tamura, Yosuke; Igarashi, Makoto; Fauzi, Mohd Erman et al.

2012 12th IEEE International Conference on Nanotechnology, NANO 2012. 2012. 6321974 (Proceedings of the IEEE Conference on Nanotechnology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tamura, Y, Igarashi, M, Fauzi, ME, Tsukamoto, R, Kaizu, T, Kiba, T, Yamashita, I, Okada, Y, Murayama, A & Samukawa, S 2012, High-density and sub-20-nm GaAs nanodisk array fabricated using neutral beam etching process for high performance QDs devices. in 2012 12th IEEE International Conference on Nanotechnology, NANO 2012., 6321974, Proceedings of the IEEE Conference on Nanotechnology, 2012 12th IEEE International Conference on Nanotechnology, NANO 2012, Birmingham, United Kingdom, 12/8/20. https://doi.org/10.1109/NANO.2012.6321974

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title = "High-density and sub-20-nm GaAs nanodisk array fabricated using neutral beam etching process for high performance QDs devices",

abstract = "III-V compound quantum dots are extremely attractive in researching the quantum effect and developing future quantum photovoltaic devices. We developed a defect-free fabrication process for sub-20-nm gallium arsenide (GaAs) nanodisk using bio-template and neutral beam etching. We successfully fabricated defect-free and high-aspect ratio GaAs/aluminium gallium arsenide (AlGaAs) stack-layered sub-20-nm nanodisk structures. The diameter of the GaAs nanodisk could be precisely controlled from 12 to 18 nm by a combination of Hydrogen-radical treatment and neutral beam etching. We then detected a strong photoluminescence peak originating from the GaAs nanodisk for the first time even when using top-down processes. We found that our fabricated nanodisk array structures have great potential for high performance III-V compound optical quantum dots devices.",

author = "Yosuke Tamura and Makoto Igarashi and Fauzi, {Mohd Erman} and Rikako Tsukamoto and Toshiyuki Kaizu and Takayuki Kiba and Ichiro Yamashita and Yoshitaka Okada and Akihiro Murayama and Seiji Samukawa",

year = "2012",

doi = "10.1109/NANO.2012.6321974",

language = "English",

isbn = "9781467321983",

series = "Proceedings of the IEEE Conference on Nanotechnology",

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AU - Tamura, Yosuke

AU - Igarashi, Makoto

AU - Fauzi, Mohd Erman

AU - Tsukamoto, Rikako

AU - Kaizu, Toshiyuki

AU - Kiba, Takayuki

AU - Yamashita, Ichiro

AU - Okada, Yoshitaka

AU - Murayama, Akihiro

AU - Samukawa, Seiji

PY - 2012

Y1 - 2012

N2 - III-V compound quantum dots are extremely attractive in researching the quantum effect and developing future quantum photovoltaic devices. We developed a defect-free fabrication process for sub-20-nm gallium arsenide (GaAs) nanodisk using bio-template and neutral beam etching. We successfully fabricated defect-free and high-aspect ratio GaAs/aluminium gallium arsenide (AlGaAs) stack-layered sub-20-nm nanodisk structures. The diameter of the GaAs nanodisk could be precisely controlled from 12 to 18 nm by a combination of Hydrogen-radical treatment and neutral beam etching. We then detected a strong photoluminescence peak originating from the GaAs nanodisk for the first time even when using top-down processes. We found that our fabricated nanodisk array structures have great potential for high performance III-V compound optical quantum dots devices.

AB - III-V compound quantum dots are extremely attractive in researching the quantum effect and developing future quantum photovoltaic devices. We developed a defect-free fabrication process for sub-20-nm gallium arsenide (GaAs) nanodisk using bio-template and neutral beam etching. We successfully fabricated defect-free and high-aspect ratio GaAs/aluminium gallium arsenide (AlGaAs) stack-layered sub-20-nm nanodisk structures. The diameter of the GaAs nanodisk could be precisely controlled from 12 to 18 nm by a combination of Hydrogen-radical treatment and neutral beam etching. We then detected a strong photoluminescence peak originating from the GaAs nanodisk for the first time even when using top-down processes. We found that our fabricated nanodisk array structures have great potential for high performance III-V compound optical quantum dots devices.

UR - http://www.scopus.com/inward/record.url?scp=84869167173&partnerID=8YFLogxK

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U2 - 10.1109/NANO.2012.6321974

DO - 10.1109/NANO.2012.6321974

M3 - Conference contribution

AN - SCOPUS:84869167173

SN - 9781467321983

T3 - Proceedings of the IEEE Conference on Nanotechnology

BT - 2012 12th IEEE International Conference on Nanotechnology, NANO 2012

T2 - 2012 12th IEEE International Conference on Nanotechnology, NANO 2012

Y2 - 20 August 2012 through 23 August 2012

ER -

High-density and sub-20-nm GaAs nanodisk array fabricated using neutral beam etching process for high performance QDs devices

Abstract

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ASJC Scopus subject areas

UN SDGs

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