High-density and sub-20-nm GaAs nanodisk array fabricated using neutral beam etching process for high performance QDs devices

Yosuke Tamura, Makoto Igarashi, Mohd Erman Fauzi, Rikako Tsukamoto, Toshiyuki Kaizu, Takayuki Kiba, Ichiro Yamashita, Yoshitaka Okada, Akihiro Murayama, Seiji Samukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

III-V compound quantum dots are extremely attractive in researching the quantum effect and developing future quantum photovoltaic devices. We developed a defect-free fabrication process for sub-20-nm gallium arsenide (GaAs) nanodisk using bio-template and neutral beam etching. We successfully fabricated defect-free and high-aspect ratio GaAs/aluminium gallium arsenide (AlGaAs) stack-layered sub-20-nm nanodisk structures. The diameter of the GaAs nanodisk could be precisely controlled from 12 to 18 nm by a combination of Hydrogen-radical treatment and neutral beam etching. We then detected a strong photoluminescence peak originating from the GaAs nanodisk for the first time even when using top-down processes. We found that our fabricated nanodisk array structures have great potential for high performance III-V compound optical quantum dots devices.

Original languageEnglish
Title of host publication2012 12th IEEE International Conference on Nanotechnology, NANO 2012
DOIs
Publication statusPublished - 2012
Event2012 12th IEEE International Conference on Nanotechnology, NANO 2012 - Birmingham, United Kingdom
Duration: 2012 Aug 202012 Aug 23

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Other

Other2012 12th IEEE International Conference on Nanotechnology, NANO 2012
CountryUnited Kingdom
CityBirmingham
Period12/8/2012/8/23

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

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