TY - GEN
T1 - High-density and sub-20-nm GaAs nanodisk array fabricated using neutral beam etching process for high performance QDs devices
AU - Tamura, Yosuke
AU - Igarashi, Makoto
AU - Fauzi, Mohd Erman
AU - Tsukamoto, Rikako
AU - Kaizu, Toshiyuki
AU - Kiba, Takayuki
AU - Yamashita, Ichiro
AU - Okada, Yoshitaka
AU - Murayama, Akihiro
AU - Samukawa, Seiji
PY - 2012
Y1 - 2012
N2 - III-V compound quantum dots are extremely attractive in researching the quantum effect and developing future quantum photovoltaic devices. We developed a defect-free fabrication process for sub-20-nm gallium arsenide (GaAs) nanodisk using bio-template and neutral beam etching. We successfully fabricated defect-free and high-aspect ratio GaAs/aluminium gallium arsenide (AlGaAs) stack-layered sub-20-nm nanodisk structures. The diameter of the GaAs nanodisk could be precisely controlled from 12 to 18 nm by a combination of Hydrogen-radical treatment and neutral beam etching. We then detected a strong photoluminescence peak originating from the GaAs nanodisk for the first time even when using top-down processes. We found that our fabricated nanodisk array structures have great potential for high performance III-V compound optical quantum dots devices.
AB - III-V compound quantum dots are extremely attractive in researching the quantum effect and developing future quantum photovoltaic devices. We developed a defect-free fabrication process for sub-20-nm gallium arsenide (GaAs) nanodisk using bio-template and neutral beam etching. We successfully fabricated defect-free and high-aspect ratio GaAs/aluminium gallium arsenide (AlGaAs) stack-layered sub-20-nm nanodisk structures. The diameter of the GaAs nanodisk could be precisely controlled from 12 to 18 nm by a combination of Hydrogen-radical treatment and neutral beam etching. We then detected a strong photoluminescence peak originating from the GaAs nanodisk for the first time even when using top-down processes. We found that our fabricated nanodisk array structures have great potential for high performance III-V compound optical quantum dots devices.
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U2 - 10.1109/NANO.2012.6321974
DO - 10.1109/NANO.2012.6321974
M3 - Conference contribution
AN - SCOPUS:84869167173
SN - 9781467321983
T3 - Proceedings of the IEEE Conference on Nanotechnology
BT - 2012 12th IEEE International Conference on Nanotechnology, NANO 2012
T2 - 2012 12th IEEE International Conference on Nanotechnology, NANO 2012
Y2 - 20 August 2012 through 23 August 2012
ER -