High density and high reliability chain FeRAM with damage-robust MOCVD-PZT capacitor with SrRuO3/IrO2 top electrode for 64Mb and beyond

O. Hidaka, T. Ozaki, H. Kanaya, Y. Kumura, Y. Shimojo, S. Shuto, Y. Yamada, K. Yahashi, K. Yamakawa, S. Yamazaki, D. Takashima, T. Miyakawa, S. Shiratake, S. Ohtsuki, I. Kunishima, A. Nitayama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

An excellent 64Mb chainFeRAM using a highly reliable capacitor with damage-robust MOCVD-PZT and SrRuO3/IrO2 top electrode (TE) is successfully demonstrated for the first time. A very large signal margin of 540mV at 1.8V is achieved for the capacitor as small as 0.19μm2. Large sensing margin is well maintained after 85°C storage, and 10 years lifetime is successfully guaranteed. The combination of damage-robust MOCVD-PZT and optimized SrRuO3/IrO2 TE as well as a sophisticated 'chain' structure that has a small bit line capacitance (Cb) nature shows excellent reliability and scalability. This work demonstrates that high density 256Mb chain FeRAM with 0.1μm2 planar capacitor can be realized.

Original languageEnglish
Title of host publication2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers
Pages126-127
Number of pages2
Publication statusPublished - 2006 Dec 1
Event2006 Symposium on VLSI Technology, VLSIT - Honolulu, HI, United States
Duration: 2006 Jun 132006 Jun 15

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2006 Symposium on VLSI Technology, VLSIT
CountryUnited States
CityHonolulu, HI
Period06/6/1306/6/15

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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