High density and high mobility transport characteristics in gated undoped GaAs/AlxGa1 -xAs heterostructures

J. Herfort, Yoshiro Hirayama

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


The two-dimensional electron gas which is formed at the interface in undoped GaAs/AlxGa1-xAs heterostructures by the electric field generated by a top gate is studied. The barrier region consists of an Al0.3Ga0.7As/Al0.5Ga0.5As superlattice to prevent undesirable tunneling through the barrier. Therefore, we are able to achieve high electron densities exceeding 1016 m-2 with sufficient small gate leakage currents in a MISFET like device for the first time. Despite the high electron density in the sample rather high mobilities of about 100 m2 V s-1 can be maintained at low temperatures. The population of the second subband is studied from Shubnikov-de Haas measurements in these devices. The role of intersubband scattering is important for understanding the magneto-transport experiments.

Original languageEnglish
Pages (from-to)1535-1540
Number of pages6
JournalSolid-State Electronics
Issue number10
Publication statusPublished - 1997 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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