Abstract
A high-performance vertical-type organic transistor has been fabricated using bis(l,2,5-thiadiazolo)-p-quinobis(l,3-dithiole) (BTQBT) for the channel layer. The BTQBT molecules are oriented horizontally, with the molecular plane of each monolayer parallel to the substrate. The π-π stacking direction of the BTQBT molecules is aligned with the carrier transport direction in this vertical transistor. The modulated drain current density exceeded 1 A cm-2 upon the application of a gate voltage of less than 5 V. In addition, the device exhibits a high on/off current ratio of over 105.
Original language | English |
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Article number | 045010 |
Journal | AIP Advances |
Volume | 6 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2016 Apr 1 |
ASJC Scopus subject areas
- Physics and Astronomy(all)