High-current operation of vertical-type organic transistor with preferentially oriented molecular film

Hirohiko Fukagawa; Yasuyuki Watanabe; Kazuhiro Kudo; Jun Ichi Nishida; Yoshiro Yamashita; Hideo Fujikake; Shizuo Tokito; Toshihiro Yamamoto

doi:10.1063/1.4947203

High-current operation of vertical-type organic transistor with preferentially oriented molecular film

Hirohiko Fukagawa, Yasuyuki Watanabe, Kazuhiro Kudo, Jun Ichi Nishida, Yoshiro Yamashita, Hideo Fujikake, Shizuo Tokito, Toshihiro Yamamoto

ENG - Electronic Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A high-performance vertical-type organic transistor has been fabricated using bis(l,2,5-thiadiazolo)-p-quinobis(l,3-dithiole) (BTQBT) for the channel layer. The BTQBT molecules are oriented horizontally, with the molecular plane of each monolayer parallel to the substrate. The π-π stacking direction of the BTQBT molecules is aligned with the carrier transport direction in this vertical transistor. The modulated drain current density exceeded 1 A cm^-2 upon the application of a gate voltage of less than 5 V. In addition, the device exhibits a high on/off current ratio of over 10⁵.

Original language	English
Article number	045010
Journal	AIP Advances
Volume	6
Issue number	4
DOIs	https://doi.org/10.1063/1.4947203
Publication status	Published - 2016 Apr 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.4947203

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title = "High-current operation of vertical-type organic transistor with preferentially oriented molecular film",

abstract = "A high-performance vertical-type organic transistor has been fabricated using bis(l,2,5-thiadiazolo)-p-quinobis(l,3-dithiole) (BTQBT) for the channel layer. The BTQBT molecules are oriented horizontally, with the molecular plane of each monolayer parallel to the substrate. The π-π stacking direction of the BTQBT molecules is aligned with the carrier transport direction in this vertical transistor. The modulated drain current density exceeded 1 A cm-2 upon the application of a gate voltage of less than 5 V. In addition, the device exhibits a high on/off current ratio of over 105.",

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T1 - High-current operation of vertical-type organic transistor with preferentially oriented molecular film

AU - Fukagawa, Hirohiko

AU - Watanabe, Yasuyuki

AU - Kudo, Kazuhiro

AU - Nishida, Jun Ichi

AU - Yamashita, Yoshiro

AU - Fujikake, Hideo

AU - Tokito, Shizuo

AU - Yamamoto, Toshihiro

PY - 2016/4/1

Y1 - 2016/4/1

N2 - A high-performance vertical-type organic transistor has been fabricated using bis(l,2,5-thiadiazolo)-p-quinobis(l,3-dithiole) (BTQBT) for the channel layer. The BTQBT molecules are oriented horizontally, with the molecular plane of each monolayer parallel to the substrate. The π-π stacking direction of the BTQBT molecules is aligned with the carrier transport direction in this vertical transistor. The modulated drain current density exceeded 1 A cm-2 upon the application of a gate voltage of less than 5 V. In addition, the device exhibits a high on/off current ratio of over 105.

AB - A high-performance vertical-type organic transistor has been fabricated using bis(l,2,5-thiadiazolo)-p-quinobis(l,3-dithiole) (BTQBT) for the channel layer. The BTQBT molecules are oriented horizontally, with the molecular plane of each monolayer parallel to the substrate. The π-π stacking direction of the BTQBT molecules is aligned with the carrier transport direction in this vertical transistor. The modulated drain current density exceeded 1 A cm-2 upon the application of a gate voltage of less than 5 V. In addition, the device exhibits a high on/off current ratio of over 105.

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High-current operation of vertical-type organic transistor with preferentially oriented molecular film

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