High crystallinity CuScO 2 delafossite films exhibiting ultraviolet photoluminescence grown by vapor-liquid-solid tri-phase epitaxy

Yuya Matsubara; Takayuki Makino; Hiroki Hiraga; Chunlin Chen; Susumu Tsukimoto; Kazunori Ueno; Yusuke Kozuka; Yuichi Ikuhara; Masashi Kawasaki

doi:10.1143/APEX.5.011201

High crystallinity CuScO ₂ delafossite films exhibiting ultraviolet photoluminescence grown by vapor-liquid-solid tri-phase epitaxy

Yuya Matsubara, Takayuki Makino, Hiroki Hiraga, Chunlin Chen, Susumu Tsukimoto, Kazunori Ueno, Yusuke Kozuka, Yuichi Ikuhara, Masashi Kawasaki

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We have grown direct wide-bandgap CuScO ₂ thin films on MgAl ₂O ₄(111) substrates by tri-phase epitaxy employing molten Bi-O flux on the growth surface. The full width at half maximum of (0006) rocking curve is as narrow as 0.005 degrees, an order of magnitude narrower than those grown by conventional pulsed laser deposition (PLD). Transmission electron microscopy confirms the scarcity of defect structures or precipitates, which are of high density in PLD films. The films exhibit sharp near-bandedge photoluminescence at 3.3 eV, which is absent in PLD films.

Original language	English
Article number	011201
Journal	Applied Physics Express
Volume	5
Issue number	1
DOIs	https://doi.org/10.1143/APEX.5.011201
Publication status	Published - 2012 Jan

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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High crystallinity CuScO ₂ delafossite films exhibiting ultraviolet photoluminescence grown by vapor-liquid-solid tri-phase epitaxy. / Matsubara, Yuya; Makino, Takayuki; Hiraga, Hiroki; Chen, Chunlin; Tsukimoto, Susumu; Ueno, Kazunori; Kozuka, Yusuke; Ikuhara, Yuichi; Kawasaki, Masashi.

In: Applied Physics Express, Vol. 5, No. 1, 011201, 01.2012.

Research output: Contribution to journal › Article › peer-review

@article{dc9ef2beb2ef463194e0c6db90b7ec19,

title = "High crystallinity CuScO 2 delafossite films exhibiting ultraviolet photoluminescence grown by vapor-liquid-solid tri-phase epitaxy",

abstract = "We have grown direct wide-bandgap CuScO 2 thin films on MgAl 2O 4(111) substrates by tri-phase epitaxy employing molten Bi-O flux on the growth surface. The full width at half maximum of (0006) rocking curve is as narrow as 0.005 degrees, an order of magnitude narrower than those grown by conventional pulsed laser deposition (PLD). Transmission electron microscopy confirms the scarcity of defect structures or precipitates, which are of high density in PLD films. The films exhibit sharp near-bandedge photoluminescence at 3.3 eV, which is absent in PLD films.",

author = "Yuya Matsubara and Takayuki Makino and Hiroki Hiraga and Chunlin Chen and Susumu Tsukimoto and Kazunori Ueno and Yusuke Kozuka and Yuichi Ikuhara and Masashi Kawasaki",

year = "2012",

month = jan,

doi = "10.1143/APEX.5.011201",

language = "English",

volume = "5",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "1",

}

TY - JOUR

T1 - High crystallinity CuScO 2 delafossite films exhibiting ultraviolet photoluminescence grown by vapor-liquid-solid tri-phase epitaxy

AU - Matsubara, Yuya

AU - Makino, Takayuki

AU - Hiraga, Hiroki

AU - Chen, Chunlin

AU - Tsukimoto, Susumu

AU - Ueno, Kazunori

AU - Kozuka, Yusuke

AU - Ikuhara, Yuichi

AU - Kawasaki, Masashi

PY - 2012/1

Y1 - 2012/1

N2 - We have grown direct wide-bandgap CuScO 2 thin films on MgAl 2O 4(111) substrates by tri-phase epitaxy employing molten Bi-O flux on the growth surface. The full width at half maximum of (0006) rocking curve is as narrow as 0.005 degrees, an order of magnitude narrower than those grown by conventional pulsed laser deposition (PLD). Transmission electron microscopy confirms the scarcity of defect structures or precipitates, which are of high density in PLD films. The films exhibit sharp near-bandedge photoluminescence at 3.3 eV, which is absent in PLD films.

AB - We have grown direct wide-bandgap CuScO 2 thin films on MgAl 2O 4(111) substrates by tri-phase epitaxy employing molten Bi-O flux on the growth surface. The full width at half maximum of (0006) rocking curve is as narrow as 0.005 degrees, an order of magnitude narrower than those grown by conventional pulsed laser deposition (PLD). Transmission electron microscopy confirms the scarcity of defect structures or precipitates, which are of high density in PLD films. The films exhibit sharp near-bandedge photoluminescence at 3.3 eV, which is absent in PLD films.

UR - http://www.scopus.com/inward/record.url?scp=84862944240&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84862944240&partnerID=8YFLogxK

U2 - 10.1143/APEX.5.011201

DO - 10.1143/APEX.5.011201

M3 - Article

AN - SCOPUS:84862944240

VL - 5

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 1

M1 - 011201

ER -

High crystallinity CuScO ₂ delafossite films exhibiting ultraviolet photoluminescence grown by vapor-liquid-solid tri-phase epitaxy

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