TY - JOUR
T1 - High crystallinity CuScO 2 delafossite films exhibiting ultraviolet photoluminescence grown by vapor-liquid-solid tri-phase epitaxy
AU - Matsubara, Yuya
AU - Makino, Takayuki
AU - Hiraga, Hiroki
AU - Chen, Chunlin
AU - Tsukimoto, Susumu
AU - Ueno, Kazunori
AU - Kozuka, Yusuke
AU - Ikuhara, Yuichi
AU - Kawasaki, Masashi
PY - 2012/1
Y1 - 2012/1
N2 - We have grown direct wide-bandgap CuScO 2 thin films on MgAl 2O 4(111) substrates by tri-phase epitaxy employing molten Bi-O flux on the growth surface. The full width at half maximum of (0006) rocking curve is as narrow as 0.005 degrees, an order of magnitude narrower than those grown by conventional pulsed laser deposition (PLD). Transmission electron microscopy confirms the scarcity of defect structures or precipitates, which are of high density in PLD films. The films exhibit sharp near-bandedge photoluminescence at 3.3 eV, which is absent in PLD films.
AB - We have grown direct wide-bandgap CuScO 2 thin films on MgAl 2O 4(111) substrates by tri-phase epitaxy employing molten Bi-O flux on the growth surface. The full width at half maximum of (0006) rocking curve is as narrow as 0.005 degrees, an order of magnitude narrower than those grown by conventional pulsed laser deposition (PLD). Transmission electron microscopy confirms the scarcity of defect structures or precipitates, which are of high density in PLD films. The films exhibit sharp near-bandedge photoluminescence at 3.3 eV, which is absent in PLD films.
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U2 - 10.1143/APEX.5.011201
DO - 10.1143/APEX.5.011201
M3 - Article
AN - SCOPUS:84862944240
VL - 5
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 1
M1 - 011201
ER -