High critical current density under magnetic fields in as-grown MgB 2 thin films deposited by molecular-beam epitaxy

M. Haruta, T. Fujiyoshi, S. Kihara, T. Sueyoshi, K. Miyahara, Y. Harada, M. Yoshizawa, T. Takahashi, H. Iriuda, T. Oba, S. Awaji, K. Watanabe, R. Miyagawa

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

As-grown MgB2 thin films were prepared by a MBE method under the conditions of low temperature, low deposition rate and high vacuum for applications in electric devices. The MgB2 thin films deposited on MgO and Ti buffered ZnO substrates have considerably higher Jc under magnetic fields among MgB2 thin films reported before. The value of Jc for the MgB2 thin film deposited on Ti buffered ZnO has been 5.8 × 105Acm-2 at 10K, 5T in the magnetic field applied parallel to the c axis. In the angular dependence of J c, the peak of Jc attributable to c-axis-correlated pinning centres has been observed when the magnetic field was applied parallel to the c axis.

Original languageEnglish
Article numberL01
Pages (from-to)L1-L4
JournalSuperconductor Science and Technology
Volume20
Issue number1
DOIs
Publication statusPublished - 2007 Jan 1

ASJC Scopus subject areas

  • Ceramics and Composites
  • Condensed Matter Physics
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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