TY - JOUR
T1 - High critical current density under magnetic fields in as-grown MgB 2 thin films deposited by molecular-beam epitaxy
AU - Haruta, M.
AU - Fujiyoshi, T.
AU - Kihara, S.
AU - Sueyoshi, T.
AU - Miyahara, K.
AU - Harada, Y.
AU - Yoshizawa, M.
AU - Takahashi, T.
AU - Iriuda, H.
AU - Oba, T.
AU - Awaji, S.
AU - Watanabe, K.
AU - Miyagawa, R.
PY - 2007/1/1
Y1 - 2007/1/1
N2 - As-grown MgB2 thin films were prepared by a MBE method under the conditions of low temperature, low deposition rate and high vacuum for applications in electric devices. The MgB2 thin films deposited on MgO and Ti buffered ZnO substrates have considerably higher Jc under magnetic fields among MgB2 thin films reported before. The value of Jc for the MgB2 thin film deposited on Ti buffered ZnO has been 5.8 × 105Acm-2 at 10K, 5T in the magnetic field applied parallel to the c axis. In the angular dependence of J c, the peak of Jc attributable to c-axis-correlated pinning centres has been observed when the magnetic field was applied parallel to the c axis.
AB - As-grown MgB2 thin films were prepared by a MBE method under the conditions of low temperature, low deposition rate and high vacuum for applications in electric devices. The MgB2 thin films deposited on MgO and Ti buffered ZnO substrates have considerably higher Jc under magnetic fields among MgB2 thin films reported before. The value of Jc for the MgB2 thin film deposited on Ti buffered ZnO has been 5.8 × 105Acm-2 at 10K, 5T in the magnetic field applied parallel to the c axis. In the angular dependence of J c, the peak of Jc attributable to c-axis-correlated pinning centres has been observed when the magnetic field was applied parallel to the c axis.
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U2 - 10.1088/0953-2048/20/1/L01
DO - 10.1088/0953-2048/20/1/L01
M3 - Article
AN - SCOPUS:33947627701
VL - 20
SP - L1-L4
JO - Superconductor Science and Technology
JF - Superconductor Science and Technology
SN - 0953-2048
IS - 1
M1 - L01
ER -