High critical current density under magnetic fields in as-grown MgB 2 thin films deposited by molecular-beam epitaxy

M. Haruta; T. Fujiyoshi; S. Kihara; T. Sueyoshi; K. Miyahara; Y. Harada; M. Yoshizawa; T. Takahashi; H. Iriuda; T. Oba; S. Awaji; K. Watanabe; R. Miyagawa

doi:10.1088/0953-2048/20/1/L01

High critical current density under magnetic fields in as-grown MgB ₂ thin films deposited by molecular-beam epitaxy

M. Haruta, T. Fujiyoshi, S. Kihara, T. Sueyoshi, K. Miyahara, Y. Harada, M. Yoshizawa, T. Takahashi, H. Iriuda, T. Oba, S. Awaji, K. Watanabe, R. Miyagawa

High Field Laboratory for Superconducting Materials

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

As-grown MgB₂ thin films were prepared by a MBE method under the conditions of low temperature, low deposition rate and high vacuum for applications in electric devices. The MgB₂ thin films deposited on MgO and Ti buffered ZnO substrates have considerably higher J_c under magnetic fields among MgB₂ thin films reported before. The value of J_c for the MgB₂ thin film deposited on Ti buffered ZnO has been 5.8 × 10⁵Acm^-2 at 10K, 5T in the magnetic field applied parallel to the c axis. In the angular dependence of J _c, the peak of J_c attributable to c-axis-correlated pinning centres has been observed when the magnetic field was applied parallel to the c axis.

Original language	English
Article number	L01
Pages (from-to)	L1-L4
Journal	Superconductor Science and Technology
Volume	20
Issue number	1
DOIs	https://doi.org/10.1088/0953-2048/20/1/L01
Publication status	Published - 2007 Jan 1

ASJC Scopus subject areas

Ceramics and Composites
Condensed Matter Physics
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1088/0953-2048/20/1/L01

Cite this

Haruta, M., Fujiyoshi, T., Kihara, S., Sueyoshi, T., Miyahara, K., Harada, Y., Yoshizawa, M., Takahashi, T., Iriuda, H., Oba, T., Awaji, S., Watanabe, K., & Miyagawa, R. (2007). High critical current density under magnetic fields in as-grown MgB ₂ thin films deposited by molecular-beam epitaxy. Superconductor Science and Technology, 20(1), L1-L4. [L01]. https://doi.org/10.1088/0953-2048/20/1/L01

High critical current density under magnetic fields in as-grown MgB ₂ thin films deposited by molecular-beam epitaxy. / Haruta, M.; Fujiyoshi, T.; Kihara, S.; Sueyoshi, T.; Miyahara, K.; Harada, Y.; Yoshizawa, M.; Takahashi, T.; Iriuda, H.; Oba, T.; Awaji, S.; Watanabe, K.; Miyagawa, R.

In: Superconductor Science and Technology, Vol. 20, No. 1, L01, 01.01.2007, p. L1-L4.

Research output: Contribution to journal › Article › peer-review

Haruta, M, Fujiyoshi, T, Kihara, S, Sueyoshi, T, Miyahara, K, Harada, Y, Yoshizawa, M, Takahashi, T, Iriuda, H, Oba, T, Awaji, S, Watanabe, K & Miyagawa, R 2007, 'High critical current density under magnetic fields in as-grown MgB ₂ thin films deposited by molecular-beam epitaxy', Superconductor Science and Technology, vol. 20, no. 1, L01, pp. L1-L4. https://doi.org/10.1088/0953-2048/20/1/L01

Haruta, M. ; Fujiyoshi, T. ; Kihara, S. ; Sueyoshi, T. ; Miyahara, K. ; Harada, Y. ; Yoshizawa, M. ; Takahashi, T. ; Iriuda, H. ; Oba, T. ; Awaji, S. ; Watanabe, K. ; Miyagawa, R. / High critical current density under magnetic fields in as-grown MgB ₂ thin films deposited by molecular-beam epitaxy. In: Superconductor Science and Technology. 2007 ; Vol. 20, No. 1. pp. L1-L4.

@article{2a8d27905de148f081563f6d09a72178,

title = "High critical current density under magnetic fields in as-grown MgB 2 thin films deposited by molecular-beam epitaxy",

abstract = "As-grown MgB2 thin films were prepared by a MBE method under the conditions of low temperature, low deposition rate and high vacuum for applications in electric devices. The MgB2 thin films deposited on MgO and Ti buffered ZnO substrates have considerably higher Jc under magnetic fields among MgB2 thin films reported before. The value of Jc for the MgB2 thin film deposited on Ti buffered ZnO has been 5.8 × 105Acm-2 at 10K, 5T in the magnetic field applied parallel to the c axis. In the angular dependence of J c, the peak of Jc attributable to c-axis-correlated pinning centres has been observed when the magnetic field was applied parallel to the c axis.",

author = "M. Haruta and T. Fujiyoshi and S. Kihara and T. Sueyoshi and K. Miyahara and Y. Harada and M. Yoshizawa and T. Takahashi and H. Iriuda and T. Oba and S. Awaji and K. Watanabe and R. Miyagawa",

year = "2007",

month = jan,

day = "1",

doi = "10.1088/0953-2048/20/1/L01",

language = "English",

volume = "20",

pages = "L1--L4",

journal = "Superconductor Science and Technology",

issn = "0953-2048",

publisher = "IOP Publishing Ltd.",

number = "1",

}

TY - JOUR

T1 - High critical current density under magnetic fields in as-grown MgB 2 thin films deposited by molecular-beam epitaxy

AU - Haruta, M.

AU - Fujiyoshi, T.

AU - Kihara, S.

AU - Sueyoshi, T.

AU - Miyahara, K.

AU - Harada, Y.

AU - Yoshizawa, M.

AU - Takahashi, T.

AU - Iriuda, H.

AU - Oba, T.

AU - Awaji, S.

AU - Watanabe, K.

AU - Miyagawa, R.

PY - 2007/1/1

Y1 - 2007/1/1

N2 - As-grown MgB2 thin films were prepared by a MBE method under the conditions of low temperature, low deposition rate and high vacuum for applications in electric devices. The MgB2 thin films deposited on MgO and Ti buffered ZnO substrates have considerably higher Jc under magnetic fields among MgB2 thin films reported before. The value of Jc for the MgB2 thin film deposited on Ti buffered ZnO has been 5.8 × 105Acm-2 at 10K, 5T in the magnetic field applied parallel to the c axis. In the angular dependence of J c, the peak of Jc attributable to c-axis-correlated pinning centres has been observed when the magnetic field was applied parallel to the c axis.

AB - As-grown MgB2 thin films were prepared by a MBE method under the conditions of low temperature, low deposition rate and high vacuum for applications in electric devices. The MgB2 thin films deposited on MgO and Ti buffered ZnO substrates have considerably higher Jc under magnetic fields among MgB2 thin films reported before. The value of Jc for the MgB2 thin film deposited on Ti buffered ZnO has been 5.8 × 105Acm-2 at 10K, 5T in the magnetic field applied parallel to the c axis. In the angular dependence of J c, the peak of Jc attributable to c-axis-correlated pinning centres has been observed when the magnetic field was applied parallel to the c axis.

UR - http://www.scopus.com/inward/record.url?scp=33947627701&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33947627701&partnerID=8YFLogxK

U2 - 10.1088/0953-2048/20/1/L01

DO - 10.1088/0953-2048/20/1/L01

M3 - Article

AN - SCOPUS:33947627701

VL - 20

SP - L1-L4

JO - Superconductor Science and Technology

JF - Superconductor Science and Technology

SN - 0953-2048

IS - 1

M1 - L01

ER -

High critical current density under magnetic fields in as-grown MgB ₂ thin films deposited by molecular-beam epitaxy

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this