High critical-current density and ultra high-voltage TEM study of filamentary 0.1 at% Zr-doped (Nd0.33Eu0.38Gd 0.28)Ba2Cu3Ox superconductors

T. Goto, E. Sato, K. Watanabe, G. Nishijima, Y. Matsui, T. Nagai, C. Tsuruta

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

We prepared filamentary 0.1 at% Zr-doped (Nd0.33Eu 0.38Gd0.28)Ba2Cu3Ox superconductors by solution spinning and partial melting in flowing 0.1% O 2 + Ar gas. The transport critical-current density (Jc) was measured at 77 K in applied magnetic fields up to 14 T by rotating the sample along a direction perpendicular to the filament length. Anisotropic behavior of the field dependence of Jc was detected by applying a field of more than 4 T. The Jc values for the Zr-doped sample were higher than those for the undoped sample on the application of fields of up to 11 T. The Jc values measured at the optimized angle for the doped sample were more than 105 A/cm2 at 77 K by applying fields of up to 6 T. Transmission electron microscopy (TEM) of the sample was performed using an ultra high-voltage TEM to clarify the pinning centers. Intergrowth of 124 phase and stacking faults in the oriented 123 matrix were observed both for the doped and undoped samples. Zr doping resulted in the fluctuation of the structure with a short disorder range of 10-30 nm. A modulated structure and fine twin planes crossing each other were partly observed for the doped sample. The presence of such small-scale disorder could improve flux pinning in the middle field region.

Original languageEnglish
Pages (from-to)166-170
Number of pages5
JournalPhysica C: Superconductivity and its applications
Volume425
Issue number3-4
DOIs
Publication statusPublished - 2005 Sep 15

Keywords

  • Field dependence of J
  • Filamentary
  • Ultra high-voltage TEM image
  • Zr-doped Nd-Eu-Gd 123 superconductors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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