TY - JOUR
T1 - High critical-current density and ultra high-voltage TEM study of filamentary 0.1 at% Zr-doped (Nd0.33Eu0.38Gd 0.28)Ba2Cu3Ox superconductors
AU - Goto, T.
AU - Sato, E.
AU - Watanabe, K.
AU - Nishijima, G.
AU - Matsui, Y.
AU - Nagai, T.
AU - Tsuruta, C.
N1 - Funding Information:
A part of this work was supported by the “Nano-technology Support Project” of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. This work was partly performed at the High Field Laboratory for Superconducting Materials, Institute for Materials Research, Tohoku University and at the National Institute for Materials Science.
PY - 2005/9/15
Y1 - 2005/9/15
N2 - We prepared filamentary 0.1 at% Zr-doped (Nd0.33Eu 0.38Gd0.28)Ba2Cu3Ox superconductors by solution spinning and partial melting in flowing 0.1% O 2 + Ar gas. The transport critical-current density (Jc) was measured at 77 K in applied magnetic fields up to 14 T by rotating the sample along a direction perpendicular to the filament length. Anisotropic behavior of the field dependence of Jc was detected by applying a field of more than 4 T. The Jc values for the Zr-doped sample were higher than those for the undoped sample on the application of fields of up to 11 T. The Jc values measured at the optimized angle for the doped sample were more than 105 A/cm2 at 77 K by applying fields of up to 6 T. Transmission electron microscopy (TEM) of the sample was performed using an ultra high-voltage TEM to clarify the pinning centers. Intergrowth of 124 phase and stacking faults in the oriented 123 matrix were observed both for the doped and undoped samples. Zr doping resulted in the fluctuation of the structure with a short disorder range of 10-30 nm. A modulated structure and fine twin planes crossing each other were partly observed for the doped sample. The presence of such small-scale disorder could improve flux pinning in the middle field region.
AB - We prepared filamentary 0.1 at% Zr-doped (Nd0.33Eu 0.38Gd0.28)Ba2Cu3Ox superconductors by solution spinning and partial melting in flowing 0.1% O 2 + Ar gas. The transport critical-current density (Jc) was measured at 77 K in applied magnetic fields up to 14 T by rotating the sample along a direction perpendicular to the filament length. Anisotropic behavior of the field dependence of Jc was detected by applying a field of more than 4 T. The Jc values for the Zr-doped sample were higher than those for the undoped sample on the application of fields of up to 11 T. The Jc values measured at the optimized angle for the doped sample were more than 105 A/cm2 at 77 K by applying fields of up to 6 T. Transmission electron microscopy (TEM) of the sample was performed using an ultra high-voltage TEM to clarify the pinning centers. Intergrowth of 124 phase and stacking faults in the oriented 123 matrix were observed both for the doped and undoped samples. Zr doping resulted in the fluctuation of the structure with a short disorder range of 10-30 nm. A modulated structure and fine twin planes crossing each other were partly observed for the doped sample. The presence of such small-scale disorder could improve flux pinning in the middle field region.
KW - Field dependence of J
KW - Filamentary
KW - Ultra high-voltage TEM image
KW - Zr-doped Nd-Eu-Gd 123 superconductors
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U2 - 10.1016/j.physc.2005.06.017
DO - 10.1016/j.physc.2005.06.017
M3 - Article
AN - SCOPUS:24344506676
VL - 425
SP - 166
EP - 170
JO - Physica C: Superconductivity and its Applications
JF - Physica C: Superconductivity and its Applications
SN - 0921-4534
IS - 3-4
ER -