High Concentration N-Doping into Ga2O3 Films by Using Pulsed-Laser Deposition with NO Plasma

J. S. Lee, R. Wakabayashi, T. Saito, K. Yoshimatsu, M. Kado, A. Ohtomo

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Nitrogen (N) is a potential acceptor dopant making a p-type semiconductor of Ga2O3. Considering highly compensative nature of metal oxides, however, high dopant concentration with low defect density is essential to the acceptor activation. In this study, we employed nitric oxide (NO) as a source of O and N during pulsed-laser deposition (PLD) of β-Ga2O3:N films. The N concentration of the films prepared on β-Ga2O3 (100) substrates was found to be ∼1021 cm-3, which is the highest ever attained. Despite of such a high concentration, the films showed high crystallinity. Moreover, both of N concentration and crystallinity of the films grown under NO plasma increased with increasing growth temperature. As a result, highly insulating properties were obtained for films grown under NO plasma. These results suggest that PLD under NO plasma is effective for high concentration N-doping into device-grade β-Ga2O3 films.

Original languageEnglish
Title of host publication2019 Compound Semiconductor Week, CSW 2019 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728100807
Publication statusPublished - 2019 May
Externally publishedYes
Event2019 Compound Semiconductor Week, CSW 2019 - Nara, Japan
Duration: 2019 May 192019 May 23

Publication series

Name2019 Compound Semiconductor Week, CSW 2019 - Proceedings


Conference2019 Compound Semiconductor Week, CSW 2019


  • GaO
  • doping
  • pulsed-laser deposition
  • thin film

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Atomic and Molecular Physics, and Optics


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