High aspect silicon structures using metal assisted chemical etching

N. V. Toan; M. Toda; T. Ono

doi:10.1109/NANO.2016.7751348

High aspect silicon structures using metal assisted chemical etching

N. V. Toan, M. Toda, T. Ono

ENG - Mechanical Systems Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This work reports on metal assisted chemical etching (MACE) for high aspect silicon structures. Ultra-high aspect trenches and pillars of 400 and 80, respectively, have been achieved by MACE. Additionally, a cantilever fabrication based on above pillars is demonstrated by using assembly technology. The pillars are assembled onto glass substrate and fixed by conductive glue. The fabricated cantilever shows a resonance frequency of 235 kHz and a quality factor of 800.

Original language	English
Title of host publication	16th International Conference on Nanotechnology - IEEE NANO 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	720-723
Number of pages	4
ISBN (Electronic)	9781509039142
DOIs	https://doi.org/10.1109/NANO.2016.7751348
Publication status	Published - 2016 Nov 21
Event	16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan Duration: 2016 Aug 22 → 2016 Aug 25

Publication series

Name	16th International Conference on Nanotechnology - IEEE NANO 2016

Other

Other	16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
Country/Territory	Japan
City	Sendai
Period	16/8/22 → 16/8/25

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

Access to Document

10.1109/NANO.2016.7751348

Cite this

High aspect silicon structures using metal assisted chemical etching. / Toan, N. V.; Toda, M.; Ono, T.

16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 720-723 7751348 (16th International Conference on Nanotechnology - IEEE NANO 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Toan, NV , Toda, M & Ono, T 2016, High aspect silicon structures using metal assisted chemical etching. in 16th International Conference on Nanotechnology - IEEE NANO 2016., 7751348, 16th International Conference on Nanotechnology - IEEE NANO 2016, Institute of Electrical and Electronics Engineers Inc., pp. 720-723, 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016, Sendai, Japan, 16/8/22. https://doi.org/10.1109/NANO.2016.7751348

@inproceedings{934dc0bf46ea44398e108a29e3769b5d,

title = "High aspect silicon structures using metal assisted chemical etching",

abstract = "This work reports on metal assisted chemical etching (MACE) for high aspect silicon structures. Ultra-high aspect trenches and pillars of 400 and 80, respectively, have been achieved by MACE. Additionally, a cantilever fabrication based on above pillars is demonstrated by using assembly technology. The pillars are assembled onto glass substrate and fixed by conductive glue. The fabricated cantilever shows a resonance frequency of 235 kHz and a quality factor of 800.",

author = "Toan, {N. V.} and M. Toda and T. Ono",

year = "2016",

month = nov,

day = "21",

doi = "10.1109/NANO.2016.7751348",

language = "English",

series = "16th International Conference on Nanotechnology - IEEE NANO 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "720--723",

booktitle = "16th International Conference on Nanotechnology - IEEE NANO 2016",

note = "16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 ; Conference date: 22-08-2016 Through 25-08-2016",

}

TY - GEN

T1 - High aspect silicon structures using metal assisted chemical etching

AU - Toan, N. V.

AU - Toda, M.

AU - Ono, T.

PY - 2016/11/21

Y1 - 2016/11/21

N2 - This work reports on metal assisted chemical etching (MACE) for high aspect silicon structures. Ultra-high aspect trenches and pillars of 400 and 80, respectively, have been achieved by MACE. Additionally, a cantilever fabrication based on above pillars is demonstrated by using assembly technology. The pillars are assembled onto glass substrate and fixed by conductive glue. The fabricated cantilever shows a resonance frequency of 235 kHz and a quality factor of 800.

AB - This work reports on metal assisted chemical etching (MACE) for high aspect silicon structures. Ultra-high aspect trenches and pillars of 400 and 80, respectively, have been achieved by MACE. Additionally, a cantilever fabrication based on above pillars is demonstrated by using assembly technology. The pillars are assembled onto glass substrate and fixed by conductive glue. The fabricated cantilever shows a resonance frequency of 235 kHz and a quality factor of 800.

UR - http://www.scopus.com/inward/record.url?scp=85006853564&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85006853564&partnerID=8YFLogxK

U2 - 10.1109/NANO.2016.7751348

DO - 10.1109/NANO.2016.7751348

M3 - Conference contribution

AN - SCOPUS:85006853564

T3 - 16th International Conference on Nanotechnology - IEEE NANO 2016

SP - 720

EP - 723

BT - 16th International Conference on Nanotechnology - IEEE NANO 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016

Y2 - 22 August 2016 through 25 August 2016

ER -

High aspect silicon structures using metal assisted chemical etching

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this