Hf-based high-k gate dielectric processing

Masaaki Niwa

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

This chapter focuses on the processing of Hf-based high-k gate dielectric film and its device fabrication to improve its electrical properties. First, the formation process of Hf-based high-k dielectric thin film is introduced followed by detail study of these films from the materials science point of view, such as its crystallization and its control, carrier trapping and doping effect on the bulk high-k film. Finally, the device processing of the Field Effect Transistor including the CMOSFET with Hf-based high-k gate dielectric and metal gate electrode is discussed.

Original languageEnglish
Title of host publicationSpringer Series in Advanced Microelectronics
PublisherSpringer-Verlag
Pages183-234
Number of pages52
DOIs
Publication statusPublished - 2013 Sep 24

Publication series

NameSpringer Series in Advanced Microelectronics
Volume43
ISSN (Print)1437-0387

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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