Heterojunctions of TiO2 nanoparticle film and c-Si with different Fermi level positions

A. Watanabe, G. Qin

    Research output: Contribution to journalArticlepeer-review

    5 Citations (Scopus)

    Abstract

    The photovoltaic properties of heterojunctions of titanium dioxide (TiO2) nanoparticle films with single crystal silicon (c-Si) substrates with different Fermi level (E f) positions were studied. The TiO2 nanoparticles of rutile and anatase structures were studied without any sintering process. To clarify the photovoltaic properties, the characteristics of the heterojunction solar cells of TiO2 nanoparticle films with p-Si and n-Si substrates were investigated, where several Si substrates with different resistivities were used. The I-V characteristics of p-Si/TiO2 heterojunction showed the rectifying behavior and photovoltaic effect. The n-Si/TiO2 heterojunction also showed good rectifying characteristics; however, the conversion efficiency was extremely lower than that of p-Si/TiO2 heterojunction. The conversion efficiencies of various Si/TiO2 (rutile) heterojunction solar cells against the Fermi level E f of c-Si showed the maximum in the p-doped region. The photovoltaic properties of the Si/TiO2 heterojunction also depended on the crystal structure of TiO2, and the conversion efficiency of anatase is higher than that of rutile, which was attributed to the higher carrier mobility of anatase.

    Original languageEnglish
    Pages (from-to)1281-1285
    Number of pages5
    JournalApplied Physics A: Materials Science and Processing
    Volume116
    Issue number3
    DOIs
    Publication statusPublished - 2014 Sep

    ASJC Scopus subject areas

    • Chemistry(all)
    • Materials Science(all)

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