Heterojunction diodes made from B-doped diamond grown heteroepitaxially on Si-doped c-BN

Chengxin Wang; Tiechen Zhang; Hongwu Liu; Chunxiao Gao; Guangtian Zou

doi:10.1088/0953-8984/14/44/415

Heterojunction diodes made from B-doped diamond grown heteroepitaxially on Si-doped c-BN

Chengxin Wang, Tiechen Zhang, Hongwu Liu, Chunxiao Gao, Guangtian Zou

SCI - Physics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Boron-doped p-type diamond thin film was grown heteroepitaxially on silicon-doped n-type cubic boron nitride (c-BN) bulk crystal by the conventional hot-filament chemical vapour deposition method. A diamond thin-film/c-BN heterojunction p-n diode was fabricated by the covering technique for the first time. The rectification ratio of the diode reached five orders. The threshold value is 1 V; the reverse bias voltage is 6 V. The results indicate that the device is of great importance.

Original language	English
Pages (from-to)	10989-10993
Number of pages	5
Journal	Journal of Physics Condensed Matter
Volume	14
Issue number	44 SPEC ISS.
DOIs	https://doi.org/10.1088/0953-8984/14/44/415
Publication status	Published - 2002 Nov 11

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics

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title = "Heterojunction diodes made from B-doped diamond grown heteroepitaxially on Si-doped c-BN",

abstract = "Boron-doped p-type diamond thin film was grown heteroepitaxially on silicon-doped n-type cubic boron nitride (c-BN) bulk crystal by the conventional hot-filament chemical vapour deposition method. A diamond thin-film/c-BN heterojunction p-n diode was fabricated by the covering technique for the first time. The rectification ratio of the diode reached five orders. The threshold value is 1 V; the reverse bias voltage is 6 V. The results indicate that the device is of great importance.",

author = "Chengxin Wang and Tiechen Zhang and Hongwu Liu and Chunxiao Gao and Guangtian Zou",

year = "2002",

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doi = "10.1088/0953-8984/14/44/415",

language = "English",

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pages = "10989--10993",

journal = "Journal of Physics Condensed Matter",

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TY - JOUR

T1 - Heterojunction diodes made from B-doped diamond grown heteroepitaxially on Si-doped c-BN

AU - Wang, Chengxin

AU - Zhang, Tiechen

AU - Liu, Hongwu

AU - Gao, Chunxiao

AU - Zou, Guangtian

PY - 2002/11/11

Y1 - 2002/11/11

N2 - Boron-doped p-type diamond thin film was grown heteroepitaxially on silicon-doped n-type cubic boron nitride (c-BN) bulk crystal by the conventional hot-filament chemical vapour deposition method. A diamond thin-film/c-BN heterojunction p-n diode was fabricated by the covering technique for the first time. The rectification ratio of the diode reached five orders. The threshold value is 1 V; the reverse bias voltage is 6 V. The results indicate that the device is of great importance.

AB - Boron-doped p-type diamond thin film was grown heteroepitaxially on silicon-doped n-type cubic boron nitride (c-BN) bulk crystal by the conventional hot-filament chemical vapour deposition method. A diamond thin-film/c-BN heterojunction p-n diode was fabricated by the covering technique for the first time. The rectification ratio of the diode reached five orders. The threshold value is 1 V; the reverse bias voltage is 6 V. The results indicate that the device is of great importance.

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U2 - 10.1088/0953-8984/14/44/415

DO - 10.1088/0953-8984/14/44/415

M3 - Article

AN - SCOPUS:0037064924

VL - 14

SP - 10989

EP - 10993

JO - Journal of Physics Condensed Matter

JF - Journal of Physics Condensed Matter

SN - 0953-8984

IS - 44 SPEC ISS.

ER -

Heterojunction diodes made from B-doped diamond grown heteroepitaxially on Si-doped c-BN

Abstract

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