Heterojunction diodes made from B-doped diamond grown heteroepitaxially on Si-doped c-BN

Chengxin Wang, Tiechen Zhang, Hongwu Liu, Chunxiao Gao, Guangtian Zou

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Boron-doped p-type diamond thin film was grown heteroepitaxially on silicon-doped n-type cubic boron nitride (c-BN) bulk crystal by the conventional hot-filament chemical vapour deposition method. A diamond thin-film/c-BN heterojunction p-n diode was fabricated by the covering technique for the first time. The rectification ratio of the diode reached five orders. The threshold value is 1 V; the reverse bias voltage is 6 V. The results indicate that the device is of great importance.

Original languageEnglish
Pages (from-to)10989-10993
Number of pages5
JournalJournal of Physics Condensed Matter
Volume14
Issue number44 SPEC ISS.
DOIs
Publication statusPublished - 2002 Nov 11

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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