Abstract
Boron-doped p-type diamond thin film was grown heteroepitaxially on silicon-doped n-type cubic boron nitride (c-BN) bulk crystal by the conventional hot-filament chemical vapour deposition method. A diamond thin-film/c-BN heterojunction p-n diode was fabricated by the covering technique for the first time. The rectification ratio of the diode reached five orders. The threshold value is 1 V; the reverse bias voltage is 6 V. The results indicate that the device is of great importance.
Original language | English |
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Pages (from-to) | 10989-10993 |
Number of pages | 5 |
Journal | Journal of Physics Condensed Matter |
Volume | 14 |
Issue number | 44 SPEC ISS. |
DOIs | |
Publication status | Published - 2002 Nov 11 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics