Heterojunction diodes made from B-doped diamond grown heteroepitaxially on Si-doped c-BN

Boron-doped p-type diamond thin film was grown heteroepitaxially on silicon-doped n-type cubic boron nitride (c-BN) bulk crystal by the conventional hot-filament chemical vapour deposition method. A diamond thin-film/c-BN heterojunction p-n diode was fabricated by the covering technique for the first time. The rectification ratio of the diode reached five orders. The threshold value is 1 V; the reverse bias voltage is 6 V. The results indicate that the device is of great importance.