Abstract
Boron-doped p-type diamond thin film was grown heteroepitaxially on silicon-doped n-type cubic boron nitride (c-BN) bulk crystal by the conventional hot-filament chemical vapour deposition method. A diamond thin-film/c-BN heterojunction p-n diode was fabricated by the covering technique for the first time. The rectification ratio of the diode reached five orders. The threshold value is 1 V; the reverse bias voltage is 6 V. The results indicate that the device is of great importance.
| Original language | English |
|---|---|
| Pages (from-to) | 10989-10993 |
| Number of pages | 5 |
| Journal | Journal of Physics Condensed Matter |
| Volume | 14 |
| Issue number | 44 SPEC ISS. |
| DOIs | |
| Publication status | Published - 2002 Nov 11 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
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Cite this
Wang, C., Zhang, T., Liu, H., Gao, C., & Zou, G. (2002). Heterojunction diodes made from B-doped diamond grown heteroepitaxially on Si-doped c-BN. Journal of Physics Condensed Matter, 14(44 SPEC ISS.), 10989-10993. https://doi.org/10.1088/0953-8984/14/44/415