Heterointerfaces: Atomic structures, electronic states, and related properties

Zhongchang Wang, Mitsuhiro Saito, Susumu Tsukimoto, Yuichi Ikuhara

    Research output: Contribution to journalReview article

    4 Citations (Scopus)

    Abstract

    Recent breakthroughs in transmission electron microscopy enable a direct quantitative determination of the technologically significant heterointerfaces, yet a direct interpretation is not always possible. Here, we review the general processes to introduce the high-precision first-principles calculations into the microscopy in order to obtain an atomistic understanding of effects of buried interfaces on a wide range of properties. We demonstrate the possibility and important advance of this combined method in relating interface structures to device physics even for the complex heterointerfaces, SiC/Ti3SiC 2, LaxSr1-xO/(SrTiO3)n, and Pd/ZnO presented here. We therefore believe that this approach should be widely applicable to many other interfaces and a range of materials, providing new insights into many long-standing unresolved issues regarding interfaces.

    Original languageEnglish
    Pages (from-to)783-793
    Number of pages11
    JournalJournal of the Ceramic Society of Japan
    Volume119
    Issue number1395
    DOIs
    Publication statusPublished - 2011 Nov

    Keywords

    • First-principles calculations
    • HRTEM
    • Interfaces
    • STEM
    • Structure-property correlation

    ASJC Scopus subject areas

    • Ceramics and Composites
    • Chemistry(all)
    • Condensed Matter Physics
    • Materials Chemistry

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