Heterogenous integration technology using wafer-to-wafer transfer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The integration of heterogeneous components and materials is a powerful method to create more functional, higherperformance and/or smaller devices. A typical example is the integration of a frequency control device with a CMOS (complementary metal oxide semiconductor) integrated circuit (IC). This paper introduces three kinds of integration methods based on wafer-to-wafer transfer technology and their applications. 1) A functional film such as ferroelectric films was transferred from a Si wafer to a CMOS wafer by adhesive wafer bonding. PZT (lead zirconate titanate), B-doped diamond and BST (barium strontium titanate) were once deposited on Si wafers at high temperature, and then transferred to CMOS wafers to fabricate a piezoelectric microswitch, an electrochemical biosensor array and a tunable power amplifier, respectively. 2) A one-chip bandwidth-tunable filter for TV white space cognitive wireless LAN was made by the monolithic integration of SAW (surface acoustic wave) resonators and BST varactors. The BST film was transferred from a sapphire wafer to a LiTaO3 wafer by laser-assisted peeling and Au-Au bonding. 3) Laser-assisted selective die transfer technology for the wafer-level integration and packaging of different sizes of dies has been developed. It was applied to a 2 GHz one-chip film bulk acoustic wave oscillator for timing applications.

Original languageEnglish
Title of host publication2015 IEEE International Ultrasonics Symposium, IUS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479981823
DOIs
Publication statusPublished - 2015 Nov 13
EventIEEE International Ultrasonics Symposium, IUS 2015 - Taipei, Taiwan, Province of China
Duration: 2015 Oct 212015 Oct 24

Publication series

Name2015 IEEE International Ultrasonics Symposium, IUS 2015

Other

OtherIEEE International Ultrasonics Symposium, IUS 2015
Country/TerritoryTaiwan, Province of China
CityTaipei
Period15/10/2115/10/24

Keywords

  • B-doped diamond
  • BST (barium strontium titanate)
  • FBAR (fim bulk acoustic resonator)
  • MEMS (micro electro mechanical systems)
  • PZT (lead zirconate titanate)
  • SAW (surface acoustic wave)
  • Wafer bonding

ASJC Scopus subject areas

  • Acoustics and Ultrasonics

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