TY - GEN
T1 - Heterogeneous integration of MEMS by adhesive bonding
AU - Esashi, M.
AU - Tanaka, S.
PY - 2015
Y1 - 2015
N2 - Wafer-level adhesive bonding has been applied for the fabrication of microsystems which have heterogeneous components on LSI (large scale integrated circuit). Devices or functional materials formed on a carrier wafer are transferred to a LSI wafer, which enables versatile heterogeneous integration, overcoming process incompatibility. Based on the developed process technology, RF resonators, a piezoelectric microswitch, tactile sensors, a parallel electron beam source etc. have been demonstrated.
AB - Wafer-level adhesive bonding has been applied for the fabrication of microsystems which have heterogeneous components on LSI (large scale integrated circuit). Devices or functional materials formed on a carrier wafer are transferred to a LSI wafer, which enables versatile heterogeneous integration, overcoming process incompatibility. Based on the developed process technology, RF resonators, a piezoelectric microswitch, tactile sensors, a parallel electron beam source etc. have been demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=84946068725&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84946068725&partnerID=8YFLogxK
U2 - 10.1149/06910.0243ecst
DO - 10.1149/06910.0243ecst
M3 - Conference contribution
AN - SCOPUS:84946068725
T3 - ECS Transactions
SP - 243
EP - 252
BT - ULSI Process Integration 9
A2 - Murota, J.
A2 - Claeys, C.
A2 - Deleonibus, S.
A2 - Tao, M.
A2 - Iwai, H.
PB - Electrochemical Society Inc.
T2 - Symposium on ULSI Process Integration 9 - 228th ECS Meeting
Y2 - 11 October 2015 through 15 October 2015
ER -