TY - GEN
T1 - Heterogeneous 3D integration - Technology enabler toward future super-chip
AU - Koyanagi, Mitsumasa
PY - 2013/12/1
Y1 - 2013/12/1
N2 - To overcome various concerns caused by scaling-down the device size, it is indispensable to introduce a new concept of heterogeneous 3D integration called a super-chip in which various kinds of device chips with different size, different devices and different materials are stacked. A key technology of self-assembly and electrostatic (SAE) temporary bonding has been developed to achieve a super-chip. Several kinds of super-chips are fabricated by stacking compound semiconductor device chip, photonic device chip and spintronic device chip on CMOS device chips.
AB - To overcome various concerns caused by scaling-down the device size, it is indispensable to introduce a new concept of heterogeneous 3D integration called a super-chip in which various kinds of device chips with different size, different devices and different materials are stacked. A key technology of self-assembly and electrostatic (SAE) temporary bonding has been developed to achieve a super-chip. Several kinds of super-chips are fabricated by stacking compound semiconductor device chip, photonic device chip and spintronic device chip on CMOS device chips.
UR - http://www.scopus.com/inward/record.url?scp=84894327810&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84894327810&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2013.6724539
DO - 10.1109/IEDM.2013.6724539
M3 - Conference contribution
AN - SCOPUS:84894327810
SN - 9781479923076
T3 - Technical Digest - International Electron Devices Meeting, IEDM
BT - 2013 IEEE International Electron Devices Meeting, IEDM 2013
T2 - 2013 IEEE International Electron Devices Meeting, IEDM 2013
Y2 - 9 December 2013 through 11 December 2013
ER -