Heteroepitaxy of germanium on Si(103) and stable surfaces of germanium

Zheng Gai, W. S. Yang, T. Sakurai, R. G. Zhao

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16 Citations (Scopus)


Despite the Si(103) surface having been reported as having a rough morphology and a thin disordered top layer, the present scanning tunneling microscopy investigation shows that germanium may grow on Si(103) as a heteroepitaxial layer, although with its surface completely faceted. On the surface of the germanium layer eight and only eight different facets can be found: Ge(103), (105), (216), (2-16), (113), (1-13), (15323), and (15-323). These are exactly the eight stable surfaces around (103) that have been reported, thus confirming that all stable germanium surfaces around (103) have already been found. Deposition of a thin layer of indium onto this highly faceted germanium surface followed by annealing may remove all the facets and make the surface consist of only Ge(103) 1× 1-In terraces, thus showing that in the In/Ge system the territory of the (103) family extends very far in all directions: to (001), (113), and (15323).

Original languageEnglish
Pages (from-to)13009-13013
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number20
Publication statusPublished - 1999

ASJC Scopus subject areas

  • Condensed Matter Physics


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