Heteroepitaxial growth of rutile TiO2 on GaN(0001) by pulsed laser deposition

Taro Hitosugi, Yasushi Hirose, Junpei Kasai, Yutaka Furubayashi, Makoto Ohtani, Kiyomi Nakajima, Toyohiro Chikyow, Toshihiro Shimada, Tetsuya Hasegawa

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    18 Citations (Scopus)

    Abstract

    Rutile TiO2(100) thin films have been grown on GaN(0001) surfaces by using the pulsed laser deposition method. Reflection high-energy electron diffraction (RHEED) measurements during the deposition clearly revealed the layer-by-layer growth of TiO2 at a substrate temperature of 400°C under an oxygen pressure of 1 × 10-5Torr. X-ray diffraction and atomic force microscopy confirmed that the obtained films have high crystallinity with atomically flat surfaces. Pole figure measurements revealed the epitaxial relationship between TiO2 and GaN, namely that the in-plane TiO2〈010〉 axis aligns parallel to the GaN〈101̄0〉

    Original languageEnglish
    Pages (from-to)L1503-L1505
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume44
    Issue number50-52
    DOIs
    Publication statusPublished - 2005 Dec 16

    Keywords

    • Epitaxial
    • GaN
    • Gallium nitride
    • Heteroepitaxial
    • PLD
    • Pulsed laser deposition
    • Thin film
    • TiO

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy (miscellaneous)
    • Physics and Astronomy(all)

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  • Cite this

    Hitosugi, T., Hirose, Y., Kasai, J., Furubayashi, Y., Ohtani, M., Nakajima, K., Chikyow, T., Shimada, T., & Hasegawa, T. (2005). Heteroepitaxial growth of rutile TiO2 on GaN(0001) by pulsed laser deposition. Japanese Journal of Applied Physics, Part 2: Letters, 44(50-52), L1503-L1505. https://doi.org/10.1143/JJAP.44.L1503